Allicdata Part #: | SMCJ45CAV6G-ND |
Manufacturer Part#: |
SMCJ45CA V6G |
Price: | $ 0.12 |
Product Category: | Circuit Protection |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | TVS DIODE 45V 72.7V DO214AB |
More Detail: | N/A |
DataSheet: | SMCJ45CA V6G Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
6000 +: | $ 0.10653 |
Current - Peak Pulse (10/1000µs): | 21A |
Supplier Device Package: | DO-214AB (SMC) |
Package / Case: | DO-214AB, SMC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | Telecom |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Series: | SMCJ |
Voltage - Clamping (Max) @ Ipp: | 72.7V |
Voltage - Breakdown (Min): | 50V |
Voltage - Reverse Standoff (Typ): | 45V |
Bidirectional Channels: | 1 |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
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TVS - Diodes are some of the most important components in the electronics industry today. The SMCJ45CA V6G is an unidirectional diode that is designed to protect three-terminal voltage suppressor against transient overvoltages, such as ESD and surge induced voltages. Its low breakdown voltage makes it ideal for use in a variety of applications, including protection of telecom and computer systems, as well as audio and video components.
The SMCJ45CA V6G is used in place of standard power supplies and other components that may be prone to ESD and surge voltages. This diode acts as an electrical barrier that triggers a breakdown voltage to quickly suppress electrical overvoltages. The diode is also capable of handling high-power applications, such as motors and high-speed switching. Its low leakage current allows for stable operation over a wide temperature range, and its surge capability is rated up to 400A peak.
The SMCJ45CA V6G is designed with a metal-oxide-semiconductor field effect structure (MOSFET). This type of semiconductor device uses a built-in gate to produce a voltage or current in order to control the circuit. MOSFETs are commonly used in analog and digital electronics for switching operations. They also offer low gate leakage and are more efficient than silicon bi-polar junction transistors (BJT), making them ideal for use in power management applications.
The working principle of the SMCJ45CA V6G device is based on its construction. It has two P-type and N-type MOSFETs connected in series, forming a diode. An external voltage is applied between P and N regions and the diode is then triggered to switch on or off depending on the value of the voltage applied. When the voltage is below the breakdown voltage, the region between P and N layers becomes zero electric field allowing current to flow. When the applied voltage is higher than the breakdown voltage, the electric field between P and N layers causes the diode to become “on”, blocking current flow and effectively clamping the voltage.
SMCJ45CA V6G diodes are used in a variety of applications including protection of telecom and computer systems, as well as audio and video components. It is an unidirectional diode that is designed to protect three-terminal voltage suppressors against transient overvoltages, such as ESD and surge induced voltages. It is based on a metal-oxide-semiconductor field effect structure (MOSFET) and is able to handle up to 400A peak surge. Its low leakage current allows for a stable operation over a wide temperature range, making it ideal for many power management applications.
The specific data is subject to PDF, and the above content is for reference
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