SMCJ58-E3/9AT

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Transient Voltage Suppressor (TVS) diodes are a type of semiconductor component specifically designed to protect vulnerable electronics against voltage transients or surges produced by external events like lightning strikes or electrostatic discharge (ESD). These components provide protection against damaging voltage spikes or electrical overstress, which can be caused by the sudden buildup of electric charges in an electrical circuit.

The SMCJ58-E3/9AT is an unidirectional, 10-volt SMC transient voltage suppressor (TVS) diode. It is an RoHS and REACH-compliant device designed to protect sensitive electronics from high-voltage surges and transient spikes in applications such as telecom equipment and semiconductors. The SMCJ58-E3/9AT is a 15.24 mm x 11.11 mm component with an ESD protection capability of up to 15 kV. The device is constructed with an enhanced glass passivated junction, a built-in peak pulse power rating of 600 watts, a maximum off-state clamping voltage of 10 volts, and a capacitance of 63pF.

The SMCJ58-E3/9AT diode is specifically designed for use in applications associated with higher voltage transient and surge protection, including telecom and automotive electronics, personal communication systems (PCS) infrastructure, automotive body electronics, and portable consumer electronic devices. The E3/9AT\'s design ensures maximum protection and a wide range of performance characteristics.

The SMCJ58-E3/9AT can be used to protect sensitive electronic components from high voltage transients or surges produced by external events such as lightning strikes or electrostatic discharges. It is designed to be connected between two conductive paths, typically between the power line and ground. Its primary function is to absorb the energy of a voltage surge or transient before it affects the device or circuit it is protecting.

The working principle of the SMCJ58-E3/9AT is based on the avalanche breakdown of a reverse biased junction diode. When a voltage higher than the breakdown voltage is applied to the diode, the depletion layer will extend and the free charge carriers will start to avalanche, creating a low resistance channel. This low resistance channel will allow current to flow through the diode, effectively dissipating the energy of the voltage transient. The SMCJ58-E3/9AT is designed to protect sensitive electronic devices against high voltage transients by providing a path for the current to flow through and dissipate the energy from the transient.

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