SMCJ7.5AHM6G Allicdata Electronics
Allicdata Part #:

SMCJ7.5AHM6G-ND

Manufacturer Part#:

SMCJ7.5AHM6G

Price: $ 0.13
Product Category:

Circuit Protection

Manufacturer: Taiwan Semiconductor Corporation
Short Description: TVS DIODE 7.5V 12.9V DO214AB
More Detail: N/A
DataSheet: SMCJ7.5AHM6G datasheetSMCJ7.5AHM6G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.11997
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Voltage - Clamping (Max) @ Ipp: 12.9V
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 122A
Series: Automotive, AEC-Q101, SMCJ
Voltage - Breakdown (Min): 8.33V
Voltage - Reverse Standoff (Typ): 7.5V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Transient voltage suppressor(TVS) diodes are increasingly becoming popular due to their ability to protect sensitive electronic components from high voltages or surges. The SMCJ7.5AHM6G is a bi-directional TVS (Transient Voltage Suppressor) diode designed to protect sensitive electronics from voltage transients, induced by lightning and other transient voltage events.

The SMCJ7.5AHM6G features ±7.5A Ipp (Peak Pulse Current) rating, 1400W peak pulse power dissipation, and 6V breakdown voltage in an ultra-small SMC package. The device is designed to protect voltage sensitive components like ICs, transistors, FETs, and thyristors from immediate surge exposure, while eliminating the need for additional fuses to protect against more continuous over-voltage.

The solid-state device is based on a zener diode structure with a 4-layered structure that acts to dissipate surge energy. This structure includes a heavily doped region whose depletion region increases in size under a reverse bias. When the reverse bias voltage applied to the device varies, the energy stored in the depletion region increases, creating a region of emergence breakdown. As a result, the device effectively limits the surge current in the circuit while at the same time protecting the circuit components from over voltage.

The SMCJ7.5AHM6G is widely used in a variety of applications including consumer electronics, industrial control, telecommunications, automotive, and medical electronics. It is also used in computer motherboards, power supplies, and other high volume electronics applications. It can be used in a wide range of circuit topologies including current limiting diodes, spark gap circuits, and avalanche diode circuits. The device can protect components from up to 1.4kW of surge current while operating at a reverse leakage current of 1mA.

The SMCJ7.5AHM6G offers excellent electrical characteristics, including a high and fast clamping response time, and provides an effective solution for protection against high-voltage transient events. The device can help reduce system downtime, and is well suited for a variety of applications requiring over-voltage protection.

The specific data is subject to PDF, and the above content is for reference

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