SMCJ75CHE3/9AT

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TVS-diodes, or Transient Voltage Suppressors, are components that are designed to protect sensitive electronic equipment from electrostatic discharges (ESD) and other types of voltage overshoots. The SMCJ75CHE3/9AT is a series of these devices, with a specific application field and working principle that make it ideal for certain types of applications.

The SMCJ75CHE3/9AT is a bi-directional TVS-diode that can be used to protect electronic equipment from ESD and power-related transients. It is rated for up to 600W of power dissipation and has a reverse working voltage rating of up to 750V. The SMCJ75CHE3/9AT also has an operating temperature range of -55°C to 150 °C, making it suitable for a wide range of applications. The device also has a peak pulse power rating of 1.5kW and a peak surge current rating of 19A.

The main application field for the SMCJ75CHE3/9AT is in the telecommunications and automotive industries. Its ability to protect sensitive electronic components make it ideal for protecting data and communication equipment from voltage overshoots, ESD, and other power-related transients. It can be used as a protection circuit for components such as modems, digital signal processors, switching modules, and power supplies.

The working principle of the SMCJ75CHE3/9AT is based on the circuit behaviour of a diode. When the voltage across the diode exceeds its rated breakdown voltage, it enters a region of nonlinearity and begins to conduct a large current. This in turn causes a voltage drop across the diode itself, preventing the excess voltage from reaching the protected device. The high-current rating of the device allows it to absorb large surges of current and provide adequate protection.

In summary, the SMCJ75CHE3/9AT is a bi-directional TVS-diode that is ideally suited for use in telecommunications and automotive applications. Its ability to absorb high levels of power and current coupled with its operating temperature range make it suitable for a wide range of applications. It works by entering a region of nonlinearity when the voltage across it exceeds its rated breakdown voltage and providing a voltage drop that prevents the excess voltage from reaching the protected device.

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