SMF10A-HE3-08

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TVS diodes, or transient voltage suppressors, are electronic components whose main purpose is to provide protection against electrical surges. The SMF10A-HE3-08 is an unidirectional, ultra-low capacitance, and ultra-fast transient voltage suppressor diode developed by Littelfuse.

The SMF10A-HE3-08 is ideal for applications where the electrical surge is below 1000 watts. It is designed to protect against surges that are typically caused by electromagnetic interference, lightning, and other transient events. This diode offers an ultra-low capacitance of 1pF which makes it suitable for high-speed data communication applications.

The SMF10A-HE3-08 features a zener-based clamping device with a rated working voltage of 8V. The operating temperature range is -55°C to 125°C and the total capacitance of the device is 2pF. The clamping voltage of the diode is 8V and the peak pulse power rating is 1000W.

The working principle of the SMF10A-HE3-08 is based on zener breakdown. When a voltage higher than 8V is applied to the diode, it triggers a zener breakdown process. This process causes the voltage to be reduced to 8V and then clamped, limiting the voltage to 8V. The device then absorbs the surge current, protecting the circuit from overvoltage.

The SMF10A-HE3-08 is generally used in applications such as high-speed data communication systems, automotive systems, telecom systems, and other applications where transient overvoltage protection is desired. When used in high-speed data communication systems, it provides strong protection against ESD and lightning-induced surges. In automotive systems, it helps to protect key components such as ECUs, sensors, and actuators. In telecom systems, it helps protect components from voltage surges generated by power system equipment.

The SMF10A-HE3-08 is an excellent choice of TVS diode for a variety of applications. Its ultra-low capacitance and ultra-fast response time make it suitable for dealing with fast rising transient voltage pulses. Its high-temperature rating and low-capacitance also make it attractive for use in high-speed data communication systems. Thanks to its industry-leading peak pulse power rating of 1000W, it is also suitable for applications where extremely intense transient overvoltage conditions are expected.

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