SMLJ43CAE3/TR13 Allicdata Electronics

SMLJ43CAE3/TR13 Circuit Protection

Allicdata Part #:

SMLJ43CAE3/TR13-ND

Manufacturer Part#:

SMLJ43CAE3/TR13

Price: $ 0.90
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 43V 69.4V DO214AB
More Detail: N/A
DataSheet: SMLJ43CAE3/TR13 datasheetSMLJ43CAE3/TR13 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.82158
Stock 1000Can Ship Immediately
$ 0.9
Specifications
Current - Peak Pulse (10/1000µs): 43.2A
Base Part Number: SMLJ43
Supplier Device Package: DO-214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 300W
Series: --
Voltage - Clamping (Max) @ Ipp: 69.4V
Voltage - Breakdown (Min): 47.8V
Voltage - Reverse Standoff (Typ): 43V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS (transient voltage suppression) diodes are surge protectors that help protect electronic devices against electrostatic discharges (ESDs) and transient overvoltages caused by lightning. The SMLJ43CAE3/TR13 is a unidirectional, bi-directional, or symmetrical TVS diode. It is designed for use in high-reliability applications up to 3.3 kV. This makes it suitable for a wide variety of applications ranging from automotive and industrial to military and aerospace.The SMLJ43CAE3/TR13 contains two main components, which are a diode bridge and an inactive semiconductor region configured to act like an open switch when a voltage passes through it. The diode bridge provides a fast response to overvoltages by conducting the current across the terminals when it is greater than the specified junction breakover voltage. This allows the circuit to stay within safe operating voltage levels. The inactive semiconductor region also helps to reduce the fault time of a surge by providing a leakage path for the current, thereby lowering the overall rise time and making the surge short-lived.When an operating voltage passes through the diode bridge, it will be either blocked or allowed to pass depending on the current level. If the current passes through and the individual diode bridge point exceeds the breakdown voltage, the resistance between the terminals is lowered and the diode bridge conducts current. If the voltage is below the breakdown voltage, the diode bridge will block the current from passing through. The inactive semiconductor region then acts as an open switch by allowing the fault current to bypass the diode bridge, thus preventing the surge from overpowering other components in the circuit.The SMLJ43CAE3/TR13 is a robust TVS diode that provides high ESD protection up to 3.3 kV. It is GMP-qualified and provides excellent low leakage current to reduce power consumption. It operates at a range of temperatures and voltages, so it is suitable for a variety of applications, including but not limited to automotive, industrial, military and aerospace. Its fast-acting protection and durable qualities make it a reliable surge protection device for high-reliability applications.

The specific data is subject to PDF, and the above content is for reference

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