| Allicdata Part #: | SMMA511DJ-T1-GE3-ND |
| Manufacturer Part#: |
SMMA511DJ-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N/P-CH 12V 4.5A SC70-6L |
| More Detail: | Mosfet Array N and P-Channel 12V 4.5A 6.5W Surface... |
| DataSheet: |  SMMA511DJ-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | TrenchFET® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | N and P-Channel |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 12V |
| Current - Continuous Drain (Id) @ 25°C: | 4.5A |
| Rds On (Max) @ Id, Vgs: | 40 mOhm @ 4.2A, 4.5V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 6V |
| Power - Max: | 6.5W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | PowerPAK® SC-70-6 Dual |
| Supplier Device Package: | PowerPAK® SC-70-6 Dual |
Description
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SMMA511DJ-T1-GE3 is a field effect transistor (FET) integrated circuit that includes a dual-gate MOSFET array device. This device is used for various analog and digital applications in such areas as data/communications and industrial control. Its features make it suitable for applications in high-speed switch-mode power supplies and direct conversion radio transmitters.
The SMMA511DJ-T1-GE3 dual-gate MOSFET array device is designed to provide high performance levels in applications requiring high speed, power efficiency, and stability. This device features a low input capacitance, making it suitable for switching-mode power supplies and other high-speed applications. Additionally, it features a low turn-on threshold, making it appropriate for use in direct conversion radio transmitters.
The SMMA511DJ-T1-GE3 dual-gate MOSFET array device is composed of an array of two MOSFETs connected in parallel. Each MOSFET is composed of a drain, source, and gate regions. The source and the drain have the same polarity, while the gate has an opposite polarity. The two MOSFETs share common source and drain terminals.
The working principle of the SMMA511DJ-T1-GE3 dual-gate MOSFET array device is based on the principle of field-effect traction. When a voltage is applied to the gate terminals, an electric field forms between the source and the drain, allowing for electrons to be conducted from the source to the drain. The larger the positive voltage applied to the gates, the greater the amount of current can be conducted. By adjusting the voltage on the gate terminals, the amount of current conducted can be easily controlled.
The SMMA511DJ-T1-GE3 dual-gate MOSFET array device is applicable in a variety of areas, including data/communications circuits, industrial control, and switching-mode power supplies. Its features make it suitable for high-speed digital and analog circuit designs, and its small size makes it easy to integrate into high-density circuits. Additionally, it is ideal for applications requiring power efficiency, such as direct conversion radio transmitters and switching-mode power supplies.
The specific data is subject to PDF, and the above content is for reference
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