SMPA1302-079LF

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The SMPA1302-079LF is a dual junction pHEMT GaAs MMIC Amplifier which exhibits low current consumption and high gain which makes it suitable for a variety of applications in the RF industry. It has a maximum gain of 18.2 dB and a maximum power of +27.5 dBm. The SMPA1302-079LF has an operation frequency range of 9 kHz to 3.2 GHz. It can be used in wireless terminals, mobile radio and wireless communication systems.

This RF amplifier has two separate ports which can be used to input and output signals. It has a wide dynamic range which allows it to work with a wide range of signals from low to high frequencies. The SMPA1302-079LF uses advanced, low-noise pHEMT technology for a high level of integration and performance. The amplifier provides a simple, low cost solution for wireless communication applications.

The SMPA1302-079LF has a low current consumption of 74.5 mA and a high stability of -50 dBV. It is capable of handling high power signals up to +27.5 dBm while providing excellent linearity, low noise and low distortion. The amplifier has a wide gain flatness and low-noise floor which makes it suitable for a variety of applications.

The working principle of the SMPA1302-079LF is based on the concept of negative feedback. The amplifier has two stages, the first stage amplifies the input through a voltage gain and the second stage provides negative feedback to reduce the output voltage while maintaining a linear response. The amplifier takes advantage of the pHEMT GaAs process which allows it to achieve a high level of linearity and low-noise performance.

The SMPA1302-079LF is ideal for use in many applications in the RF industry including wireless terminals, mobile radio and wireless communication systems. The amplifier provides a low-cost, high-performance solution for a wide range of applications. The wide dynamic range and low-noise floor make it suitable for use in low-noise applications. With its high stability and low current consumption, it is an ideal choice for the RF industry.

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