SMV1272-079LF Allicdata Electronics

SMV1272-079LF Discrete Semiconductor Products

Allicdata Part #:

863-1727-2-ND

Manufacturer Part#:

SMV1272-079LF

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Skyworks Solutions Inc.
Short Description: DIODE VARACTOR
More Detail: Varactor Single 15V Surface Mount SC-79
DataSheet: SMV1272-079LF datasheetSMV1272-079LF Datasheet/PDF
Quantity: 21000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
3000 +: $ 0.08813
6000 +: $ 0.08244
15000 +: $ 0.07676
30000 +: $ 0.07278
75000 +: $ 0.07182
Stock 21000Can Ship Immediately
$ 0.1
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Capacitance Ratio: 3
Capacitance Ratio Condition: C1/C4
Voltage - Peak Reverse (Max): 15V
Diode Type: Single
Q @ Vr, F: --
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SC-79
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Varicaps, or Variable Capacitance (VC) diodes, are a type of semiconductor diode used to dynamically control capacitance given a small AC bias voltage applied to the diode\'s junction. They are commonly used in variable frequency oscillators, phase locked loop (PLL) circuits, dynamic frequency tuning, and frequency synthesizer circuits.

One of the most commonly used VC diodes is the SMV1272-079LF. This diode has a capacitance range from 12pF to 72pF. It is also able to handle reverse bias voltages up to 10V, allowing for enhanced dynamic range. It has a highly linear capacitance tuning with applied bias, making it suitable for a wide range of applications.

The main principle of operation for the SMV1272-079LF is based on the "Punch-Through Biasing" (PTB) phenomenon. With PTB, when a reverse bias is applied above a certain voltage, against a lightly doped junction in the semiconductor material, the electric field punches right through the junction and forms a conductive channel. This conductive channel alters the capacitance value of the diode.

In the case of SMV1272-079LF, when the applied reverse bias voltage is raised beyond 3V, the channel conducts electrons and holes that form the conductive channel, creating an abrupt change in the capacitance of the diode. The linearity and switching threshold of the SMV1272-079LF are both very good in comparison to other VC diodes, making it an ideal choice for customer applications.

The SMV1272-079LF can be used in a wide range of applications requiring a dynamic adjusting of capacitance, such as RF front ends, band pass filters, voltage controlled oscillators, automatic gain control, and frequency synthesis. The adjustable capacitance also allows for dynamic frequency tuning of the circuits, allowing for greater flexibility and accuracy.

The SMV1272-079LF is also able to provide very low loss RF reflections, and is additionally capable of maintaining high isolation when connected to extremely low impedance points. This makes the diode highly suitable for high frequency, high fidelity RF applications, where superior performance and automated tunability are required.

The SMV1272-079LF also has excellent power handling capabilities. The diodes maximum reverse bias voltage of 10V, when combined with it\'s high breakdown voltage of 10V, allows for it to handle higher power RF signals than other similar diodes.

The SMV1272-079LF is also able to withstand repeated reverse bias voltages without damage. This allows for rapid frequency switching, as well as sustained operation, without premature diode failure. The diode also has a very low second breakdown voltage, and is able to remain robust when exposed to high power load with high capacitance resonance.

In conclusion, the SMV1272-079LF is a highly capable VC diode that makes an ideal choice for applications requiring dynamic frequency tuning and adjustable capacitance. The diode is highly linear, and has excellent dynamic range, power handling capabilities, and robustness. It is capable of delivering highly reliable performance in RF frontends, band pass filters, voltage controlled oscillators, automatic gain control, and frequency synthesis circuits.

The specific data is subject to PDF, and the above content is for reference

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