SN75451BDRE4 Allicdata Electronics
Allicdata Part #:

SN75451BDRE4-ND

Manufacturer Part#:

SN75451BDRE4

Price: $ 0.21
Product Category:

Integrated Circuits (ICs)

Manufacturer: Texas Instruments
Short Description: IC DUAL PERIPHERAL DRVR 8-SOIC
More Detail: Low-Side Gate Driver IC Inverting 8-SOIC
DataSheet: SN75451BDRE4 datasheetSN75451BDRE4 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.18909
Stock 1000Can Ship Immediately
$ 0.21
Specifications
Logic Voltage - VIL, VIH: 0.8V, 2V
Base Part Number: SN75451
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Rise / Fall Time (Typ): 5ns, 7ns
Input Type: Inverting
Current - Peak Output (Source, Sink): 500mA, 500mA
Series: --
Voltage - Supply: 4.75 V ~ 5.25 V
Gate Type: N-Channel, P-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Low-Side
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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PMIC gate drivers are devices that are used to boost or control the gate voltage. The gate drivers act as an interface between the gate and the rest of the power circuit. SN75451BDRE4 is a type of PMIC gate drivers from Texas Instruments. It is designed to drive high voltage MOSFETs and IGBTs.

The SN75451BDRE4 is a dual MOSFET driver optimized for driving high voltage MOSFETs up to 600V. The device has two outputs that are capable of producing high voltage pulses for a wide range of applications such as switching services, power inverters, and chargers. The driver also has an integrated pulse-by-pulse current limit function to prevent over-current conditions.

In terms of features, the SN75451BDRE4 has a wide operating temperature range of -40 to +125°C and a minimum switching frequency of 1kHz. The device also has an integrated clamp circuit which limits the voltage from VDS to VCC+0.5V. Additionally, the device can also be used in a shutdown mode which reduces the power consumption.

In terms of applications, the SN75451BDRE4 can be used in high voltage MOSFET and IGBT applications such as motor control, lighting, and solar energy generation. This device can also be used in the dynamic brake of servomotors, dc-ac power inverters, dc-dc converters, and motor drives. This driver is ideal for controlling high-power MOSFETs in brushless DC motor applications.

In terms of working principle, the SN75451BDRE4 uses a charge pump to generate the high voltage gate drive voltage. When the input is switched, the charge pump creates a high voltage pulse which is sent to the gate of the MOSFET. This voltage is then amplified and applied to the gate of the MOSFET which switches it on. The device also has an integrated current limit function which helps prevent the MOSFET from becoming over current.

In conclusion, the SN75451BDRE4 is a PMIC gate driver that is optimized for driving high voltage MOSFETs and IGBTs. The device is capable of producing high voltage pulses for a wide range of applications and has an integrated pulse current limit function. The wide operating temperature range, minimum switching frequency and integrated clamp circuit make this device ideal for motor control, lighting, and solar energy generation applications. The device uses a charge pump to generate the high gate drive voltage, and has integrated current limit function to prevent over-current conditions.

The specific data is subject to PDF, and the above content is for reference

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