SQ3985EV-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQ3985EV-T1_GE3-ND

Manufacturer Part#:

SQ3985EV-T1_GE3

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2 P-CH 20V 3.9A 6TSOP
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 3.9A (Tc) 3W S...
DataSheet: SQ3985EV-T1_GE3 datasheetSQ3985EV-T1_GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.16171
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: Automotive, AEC-Q101, TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 145 mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Power - Max: 3W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Description

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The SQ3985EV-T1_GE3 is a voltage-controlled field effect transistor (FET). Voltage-controlled transistors are electrical components that are used in various applications, including in the desired functioning of applied circuits and devices. An important application area of FETs is in the field of radio frequency communication systems, where they are used to amplify signals. The SQ3985EV-T1_GE3 is an example of a special type of FET called an array. An array is an electrical device composed of more than one transistors connected electrically together. The SQ3985EV-T1_GE3 is an array of two FETs, with each FET having it’s own Gate, Source, and Drain. This type of array is designed to allow more control over the device’s voltage and current requirements, as well as providing improved electrical performance.

The SQ3985EV-T1_GE3 array has a wide range of applications in various industries, from telecommunications and automotive to consumer electronics. This particular FET array is often used in high-performance components in electronic instruments, providing improved energy efficiency and a high level of accuracy. The array is often used as a current amplifier in these devices as it requires less power to control compared to other more traditional FETs.

The functioning of the SQ3985EV-T1_GE3 array works by applying a voltage at the Gate of each FET. This essentially creates a conductive connection between the Source and the Drain of the FET, allowing electrons to flow through the array and creating an electrical current. The Gate in the array acts as a switch, controlling the current flowing through the array based on the voltage applied to it. By controlling the voltage applied to the Gate, the user can control how much current is flowing through the array.

The two FETs in the array are also instigated differently. The Gate terminals of the two FETs are connected together, so a single voltage source can be applied to them. This eliminates the need for a separate voltage source to operate each FET. The Source and Drain terminals, however, are isolated, allowing the user to separately define currents at the Source and the Drain.

The SQ3985EV-T1_GE3 array offers a great deal of flexibility in its applications and these benefits have made it increasingly popular in the field of electronics. It provides a high level of performance with minimal power consumption, allowing it to be used in a wide range of applications, from consumer devices to aerospace systems. The array can be utilized in a variety of ways to provide high powered current capacity and better control over the voltage and current needs of the device.

The specific data is subject to PDF, and the above content is for reference

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