Allicdata Part #: | SRT19HA0G-ND |
Manufacturer Part#: |
SRT19HA0G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE SCHOTTKY 90V 1A TS-1 |
More Detail: | Diode Schottky 90V 1A Through Hole TS-1 |
DataSheet: | SRT19HA0G Datasheet/PDF |
Quantity: | 1000 |
12000 +: | $ 0.04819 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 90V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 800mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 90V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | TS-1 |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes are electronic components that are used to allow one-way current flow, or rectification, from a source to a load. Single diodes are the most basic type of diode, which consists of a single p-n junction. The SRT19HA0G is a type of single diode that is used in a variety of applications. In this article, we will discuss the various application fields and working principles of the SRT19HA0G.
Overview of SRT19HA0G
The SRT19HA0G is a high-power, surface-mount Schottky barrier diode. This diode has a breakdown voltage of 19 volts, which allows it to handle higher power requirements than other single diodes. It also has a low forward voltage drop of 400 mV, making it an efficient choice for rectification. The junction temperature of the SRT19HA0G can operate up to 175°C and the storage temperature range is -55°C to +150°C. Overall, the SRT19HA0G is a very versatile diode that is suitable for use in many applications.
Application Fields
The SRT19HA0G is a versatile diode that can be used in a variety of applications. It is commonly used in AC/DC signals, ripple current suppression, DC/DC conversion, power converters, and more. The high breakdown voltage and low forward voltage drop make the SRT19HA0G an ideal choice for applications that require efficient rectification. In addition, it can be used to replace conventional small signal diodes in circuits.
The SRT19HA0G is often used in switching power supplies, dc-to-dc converters, and other high-power, high-frequency circuits. Its high-frequency capability makes it suitable for high-speed switching applications, as well as for harmonic attenuation in solutions such as solar inverters and power line conditioning. It is also used in communications, audio, and video equipment, and other consumer electronics.
In automotive applications, the SRT19HA0G is used for battery protection, ESD protection, and high-side switch protection. It can also be used in automotive lighting, such as headlamp ballasts, for efficient rectification. The SRT19HA0G is also used in automotive infotainment systems, such as radios and DVD players.
Working Principle
The working principle of the SRT19HA0G is based on the p-n junction semiconductor. The diode is made up of two regions, known as the n-type region and the p-type region, that are separated by a barrier. In the n-type region, electrons are the majority carriers, while in the p-type region, holes are the majority carriers. The p-n junction creates a space charge that blocks the flow of current from the p-region to the n-region.
When forward biased, the SRT19HA0G allows the current to flow from the p-region to the n-region, creating a path for electrons to travel through the diode. This creates an electric field that pulls the holes in the p-region into the n-region, allowing current to flow in the forward direction. When reverse biased, the holes are blocked from entering the n-region, preventing current from flowing in the reverse direction.
Conclusion
The SRT19HA0G is a single Schottky barrier diode with a wide range of applications in both consumer and industrial electronics. Its high breakdown voltage and low forward voltage drop make it an efficient option for rectification. The working principle of the SRT19HA0G is based on the p-n junction semiconductor, allowing current to flow in the forward direction when forward biased and blocking current from flowing in the reverse direction when reverse biased.
The specific data is subject to PDF, and the above content is for reference
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