Allicdata Part #: | SS110FL-TPMSTR-ND |
Manufacturer Part#: |
SS110FL-TP |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE SCHOTTKY 100V 1A DO221AC |
More Detail: | Diode Schottky 100V 1A Surface Mount DO-221AC (SMA... |
DataSheet: | SS110FL-TP Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02812 |
30000 +: | $ 0.02646 |
50000 +: | $ 0.02481 |
100000 +: | $ 0.02205 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 850mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 500µA @ 100V |
Capacitance @ Vr, F: | 110pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-221AC, SMA Flat Leads |
Supplier Device Package: | DO-221AC (SMA-FL) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes are a very important part of a semiconductor circuit, and they are used in a wide range of applications including power, RF, and digital circuit designs. The SS110FL-TP is one of the single rectifiers frequently used as a switching rectifier. It is a low voltage, single-phase, full wave, and three-terminal device that is capable of providing a continuous forward current of 1.0A (average).
The maximum forward voltage drop at 1.0A (average) is 1.15V and the maximum reverse current is less than 10 μA. The SS110FL-TP was designed for use in low voltage applications and is suitable for use in applications where minimum voltage drop and low electrical noise are required. Additionally, the SS110FL-TP has a high switching frequency and low power dissipation. This makes it ideal for applications such as switching regulators, motor drives, lighting and low voltage power supplies.
The SS110FL-TP is constructed from epitaxial silicon, with an anode connected to the lead frame and anode metal plate. The cathode and anode metal plates are thermally connected by a die pad. The cathode is connected to the full wave bridge rectifier and is surrounded by a low thermal resistance silicone compound. This compound enhances the thermal characteristics of the device and ensures efficient heat transfer.
The SS110FL-TP is a thyristor device, which means it has two distinct operating states. In the forward bias state, a positive gate voltage is applied across the anode and cathode of the device, which causes the current to move through it in the same direction. In the reverse bias state, a negative gate voltage is applied across the anode and cathode of the device, which prevents the current from moving through it in the same direction. This provides the SS110FL-TP with the ability to control the flow of current through a circuit.
The working principle of the SS110FL-TP is relatively simple and involves the use of two diodes in a bridge configuration. When a supply voltage is applied to the anode and cathode of the diode bridge, a full wave DC output is generated, which is then filtered and regulated to produce the desired voltage. The SS110FL-TP can be used in a variety of applications including switching regulators, motor drives, lighting, and low voltage power supplies.
In conclusion, the SS110FL-TP is a popular single rectifier device that is used in a wide range of power, RF and digital applications. The device is ideally suited for low voltage applications due to its low forward voltage drop, low power dissipation, and high switching frequency. The device is constructed from epitaxial silicon, with an anode connected to the lead frame and anode metal plate, and a cathode connected to the full wave bridge rectifier. The SS110FL-TP works by using two diodes in a bridge configuration, which produces a full wave DC output when a supply voltage is applied to it.
The specific data is subject to PDF, and the above content is for reference
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