SS1150-LTP Allicdata Electronics
Allicdata Part #:

SS1150-LTPMSTR-ND

Manufacturer Part#:

SS1150-LTP

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE SCHOTTKY 150V 1A DO214AC
More Detail: Diode Schottky 150V 1A Surface Mount DO-214AC (SMA...
DataSheet: SS1150-LTP datasheetSS1150-LTP Datasheet/PDF
Quantity: 1000
5000 +: $ 0.06152
10000 +: $ 0.05755
25000 +: $ 0.05292
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 150V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Base Part Number: SS1150
Description

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Diodes - Rectifiers - Single: SS1150-LTP Application Field and Working Principle

A single diode, also known as SS1150-LTP, is one of the most basic and commonly used components available in the electronics market. The device is mainly utilized for rectifying AC (alternate current) signals or pulses and converting them into DC (direct current) signals or pulses. It could be used for various applications related to signal processing, signal control and signal conversion.

The SS1150-LTP has a wide range of application fields, including signal rectification, signal routing, inverting, or even basic switching. For example, single diodes can be used for AC-DC conversion, controlling signal voltages and currents, signal switching, and even as protection against reverse voltage. Furthermore, SS1150-LTPs can be used as part of more complex circuits, such as amplifiers, timers, and oscillators.

The SS1150-LTPs are made of two distinct layers: a P-type and an N-type. The P-type layer has holes and is positively charged, while the N-type layer has electrons and is negatively charged. When the diode is forward-biased (current applied in the direction of the P-type layer), the electric field crosses the semiconductor junction and allows electrons to flow from the N-type to the P-type layer. This leads to current flow and the diode will conduct.

On the other hand, when the diode is reversed-biased (current applied in the direction of the N-type layer), the electric field across the semiconductor junction is opposed and prevents the transferring of electrons from the N-type layer to the P-type. This results in no current flow and the diode will behave like an open-circuit. The reverse-bias voltage required to turn off the diode is known as the breakdown voltage. This can be adjusted in the same way as any other diode.

The SS1150-LTP is mainly seen in automotive, computer and telecommunications devices because of its excellent characteristics, such as robust construction and low noise. The device can be used even in extreme temperature conditions and can handle large power ratings up to 200V. The device offers superior reliability, and it provides superior signal control.

The SS1150-LTP can also be used in various safety components, such as fuse-less low-side switches, low-side protection, and positive temperature coefficient resistors. Furthermore, diodes in general are also used for lighter, flasher, and power control circuits. All these applications combined make the SS1150-LTP a very versatile and powerful component.

In conclusion, the SS1150-LTP is one of the most important components in the electronics market. It is an incredibly versatile, reliable and robust device that can be used for a variety of applications. It is mainly used for signal rectification, signal routing, signal switching, and protection against reverse voltage. The device offers superior reliability, and it can handle large power ratings up to 200V. Furthermore, the device can be used even in extreme temperature conditions, making it an ideal choice for automotive, computer and telecommunications devices.

The specific data is subject to PDF, and the above content is for reference

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