Allicdata Part #: | SS25LHM2G-ND |
Manufacturer Part#: |
SS25LHM2G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE SCHOTTKY 50V 2A SUB SMA |
More Detail: | Diode Schottky 50V 2A Surface Mount Sub SMA |
DataSheet: | SS25LHM2G Datasheet/PDF |
Quantity: | 1000 |
7500 +: | $ 0.05120 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 700mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 400µA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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The SS25LHM2G is a 3.3V single channel ESD protection diode. This device is used in many applications to protect systems, such as USB ports, audio connectors, Ethernet ports and many more, from electrostatic discharge or ESD. The SS25LHM2G is a silicon-based bi-directional trigger diode with a maximum peak current of 5A and a working frequency of up to 13GHz. Its most notable feature is its low capacitance of 0.8pF which makes it revolutionary for ultra-high speed data transmission. This diode is designed to protect from ESD in both directions, meaning it will limit the amount of energy being discharged from the system or being absorbed into the system.
The operating principle of the SS25LHM2G is grounded in its unique dual-zone protection structure. This structure consists of two separate and distinct protection zones, each with their own unique voltage and impedance. The first zone is a low voltage zone, with a voltage threshold between 0-2V and a impedance of 4k-50k. This zone is responsible for the small transient events, such as those caused by ESD or other transients, and will clamp the voltage at a constant level to protect the system. The second zone is a high voltage zone, with a voltage threshold between 2-6V and an impedance of 40k-200k. This zone will limit the voltage to a safe level and act as a surge suppressor for high energy discharges. The protection structure also features a low power consumption design, meaning it consumes very little energy and does not require any external bias.
The SS25LHM2G is primarily used for short-term voltage peak suppression and for preventing ESD-induced damage in electronic components. This diode is ideal for data transmission applications as it has a low capacitance which helps reduce EMI and prevents signal distortion. It is also used in many consumer electronics and industrial applications as a form of surge suppressor as it is able to withstand high peak currents without affecting the system. It can also be used in applications where electrostatic noise is a concern, such as medical and automotive, as it has the ability to protect sensitive systems from high voltage transients.
In conclusion, the SS25LHM2G is a 3.3V single channel ESD protection diode which provides reliable and efficient protection from electrostatic discharge. It is widely used in data transmission applications due to its low capacitance and high frequency operation, as well as other applications where ESD protection is required. The device’s unique dual-zone protection structure provides reliable protection for both small and large transient events, making it the perfect choice for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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