SS35 V6G

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The SS35 V6G is a single-phase rectifying silicon diode with a low forward voltage drop and high surge current capability. It is used for reverse-biased rectifying and power switching applications.

The SS35 V6G is typically used in power switching circuits, reciprocating compressors and in converter systems such as AC-DC and DC-DC converters. It is also used in DC motors, switching power supplies and as general purpose rectifiers. The device is designed to handle high inrush current. It is available in a TO-220 package with a maximum voltage rating of 600V and a maximum current rating of 6A.

Features and Benefits of the SS35 V6G

• Low forward voltage drop
• High surge current capability
• High-temperature tolerance
• High-temperature operating stability
• High-frequency switching
• Continuous reverse voltage rating up to 600V
• High inrush current capability
• Lead-free manufacturing

Application Areas

The SS35 V6G is used in a variety of different applications such as AC-DC and DC-DC converters, reciprocating compressors, power switching circuits, DC motors, general purpose rectifiers and switching power supplies. It is suitable for applications where a high-temperature, high-frequency and high-current switching environment is required.

Working Principle

The SS35 V6G is a type of diode, which is a two-terminal semiconductor device. Diodes allow the flow of current in one direction, and when the flow of current is reversed, it acts as an open circuit. The SS35 V6G is a silicon-type diode which means it is made from a single crystalline silicon material. The device has a low forward voltage drop and a high surge current capability due to its high doping level.

The rectifying effect of a diode is due to the rectification effect of the P-N junction at the middle of the diode. The rectification effect of the P-N junction is caused by the minority carriers that are present at the junction. These minority carriers are electrons and holes which have a basic role in providing current flow through the diode. The P-N junction breaks down at a certain voltage, which is the reverse breakdown voltage, and when it breaks down the diode can conduct current in the reverse direction.

The SS35 V6G is an ideal diode for reverse-biased rectifying and power switching applications since it has a high surge current capability and a low forward voltage drop. The device is also capable of handling high inrush current and is suitable for high-temperature, high-frequency and high-current switching environments.

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