
Allicdata Part #: | 641-1790-2-ND |
Manufacturer Part#: |
SS8050-G |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Comchip Technology |
Short Description: | NPN TRANSISTOR 1.5A 40V SOT-23 R |
More Detail: | Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz 300mW... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.02465 |
6000 +: | $ 0.02143 |
15000 +: | $ 0.01822 |
30000 +: | $ 0.01715 |
75000 +: | $ 0.01608 |
150000 +: | $ 0.01429 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
Power - Max: | 300mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
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SS8050-G is a NPN bipolar junction transistor (BJT) that is commonly used in a wide range of digital and analog circuits, such as amplifiers, oscillators, switched-mode power supply circuits, and in switching applications. It is a medium power (250 mW) device with a low collector-emitter saturation voltage (Vce(sat)) of 0.4 V max at Ic = 200 mA. This allows for an efficient use of power as it can provide more current with less voltage, enabling devices using the SS8050-G to require less input power.The SS8050-G features current gain (hFE) ranging from 100 to 250 at its base current of 10 mA, and a maximum current rating of 800 mA. It also features a wide current gain-bandwidth product (fT) of 600 MHz, a high emitter-base voltage (Vbe) of 6 V, and a maximum collector-base voltage (Vcb) rating of 30 V. Due to its wide range of operating parameters, the SS8050-G is ideal for a variety of circuits and applications. The SS8050-G is designed to accept a wide range of input signals and is capable of amplifying low-level signals to higher levels. It can also be used to create an oscillator, in which an input signal is continuously amplified until it is strong enough to produce a waveform output. Similarly, the SS8050-G can be used in switching applications, as it can turn on and off with a small amount of input current. In addition, the SS8050-G can be used in switching power supply circuits, where it is used to regulate the output voltage by controlling the current flowing through the circuit. Using the SS8050-G, such power supplies can efficiently provide a steady output voltage with minimal power dissipation.The SS8050-G is also useful in analog circuits, where it can amplify signals to a desired level. This is because it is designed to have both a high gain-bandwidth product and a low saturation voltage, allowing it to provide good linearity and high current while still maintaining low power dissipation. Overall, the SS8050-G is a versatile NPN bipolar junction transistor that is well-suited for a variety of digital and analog applications. Its medium power, low Vce(sat) rating, and wide range of operating parameters allow for efficient use of power, high signal amplification, and stable signal switching, making the SS8050-G an ideal choice for a variety of circuits.
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