SS8050DBU Allicdata Electronics
Allicdata Part #:

SS8050DBU-ND

Manufacturer Part#:

SS8050DBU

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 25V 1.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz 1W Th...
DataSheet: SS8050DBU datasheetSS8050DBU Datasheet/PDF
Quantity: 4811
1 +: $ 0.22000
10 +: $ 0.21340
100 +: $ 0.20900
1000 +: $ 0.20460
10000 +: $ 0.19800
Stock 4811Can Ship Immediately
$ 0.22
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: SS8050
Description

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Bipolar transistors, also known as junction transistors, are among the most important and most widely used electronic devices. A single bipolar transistor can function as a low-noise and high-gain amplifier, digital switch, rectifier, and relay driver and as a switch. The SS8050DBU is a general purpose NPN bipolar transistor. It is suitable for use in a variety of electronic applications, including signal processing, audio, power control, and power management.

The SS8050DBU is a three-terminal semiconductor device that can be used as an amplifier, switch, or rectifier. It is composed of two PN junctions that are biased in opposite directions. When a small current is applied to the base terminal of the device, it creates a larger current flow between the collector and emitter terminals. In this way, it can be used to amplify a signal or switch electric current. The amount of current amplification is called the gain of the device.

The SS8050DBU has several important features. It has a low collector-to-emitter saturation voltage that makes it suitable for use in high power applications. Its maximum current rating is 1.5 A and its maximum power dissipation is 1 W. It has an on-state voltage drop of 0.7 V and an off-state voltage drop of 0.2 V. It has a high continuous collector-to-base reverse current (ICBO) rating of 100 μA, which is important for protecting the device from damage due to electrical arcing or incorrect wiring. Finally, the SS8050DBU has a maximum collector-to-emitter voltage of 40 V.

The SS8050DBU can be used in a variety of applications. For example, it can be used to amplify weak signals such as audio signals. It can also be used in power control applications to switch electrical current. Finally, it can be used in power management applications, such as in switching regulators. In these applications, it is often connected to other components such as transistors, MOSFETs, and diodes, to form a complete circuit.

The SS8050DBU is a general purpose NPN bipolar transistor. Its features make it suitable for use in a variety of applications, including signal processing, audio, power control, and power management. For example, it can be used to amplify weak signals, switch electrical current, and protect components from damage due to arcing. Finally, it can be connected to other components to form a complete circuit. The SS8050DBU is a versatile and reliable component that is well suited to many electronic applications.

The specific data is subject to PDF, and the above content is for reference

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