Allicdata Part #: | SST201-T1-E3TR-ND |
Manufacturer Part#: |
SST201-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | JFET N-CH 25V .7MA SOT-23 |
More Detail: | JFET N-Channel 40V 350mW Surface Mount SOT-23 |
DataSheet: | SST201-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 200µA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 300mV @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | 4.5pF @ 15V |
Power - Max: | 350mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Description
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.Transistors - JFETs
The JFET, or junction field-effect transistor, is a device commonly used in digital circuitry and other electrical applications. JFETs are unipolar, meaning they have only a single type of charge carrier. They are also very versatile, coming in both N-type and P-type varieties. In terms of mechanics, a JFET consists of the junction, which is a channel through which current flows, and the gate, which controls the voltage that is applied across the channel.SST201-T1-E3 Application Field and Working Principle
The SST201-T1-E3 is a JFET device specifically designed for use in low-noise power amplifiers and other high-frequency applications. It has a field-effect transconductance of 500 μmho, a drain-source threshold voltage of -1.5 V, and a maximum drain current of 30 mA. It has an operating junction temperature range of -65 °C to +175 °C.The most characteristic feature of a JFET is its gate-source voltage-controlled current path, which is known as the transconductance. JFETs essentially act as voltage-controlled resistors, as the gate-source voltage controls the amount of current that is allowed to flow between the source and the drain. The SST201-T1-E3 utilizes this property in order to produce low-noise and high-frequency amplifications.The SST201-T1-E3 has been designed with a low noise figure of 0.9 dB, making it ideal for use in weak signal amplifications. It also achieves a high frequency response of up to 2.4 GHz, making it suitable for a wide range of applications such as microwave amplifiers, receivers and antenna systems. In addition, it has a high input impedance of 20 kΩ, resulting in excellent linearity and low distortion.In conclusion, the SST201-T1-E3 is a versatile and reliable JFET device that can be used in a wide range of applications. It is particularly well suited for low-noise, high-frequency applications due to its low noise figure and high frequency response. Furthermore, its high input impedance provides excellent linearity and low distortion, making it an ideal choice for microwave amplifiers, transmitters, receivers and antenna systems.The specific data is subject to PDF, and the above content is for reference
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