SST25PF040B-80-4C-S2AE Allicdata Electronics
Allicdata Part #:

SST25PF040B-80-4C-S2AE-ND

Manufacturer Part#:

SST25PF040B-80-4C-S2AE

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 4M SPI 80MHZ 8SOIC
More Detail: FLASH Memory IC 4Mb (512K x 8) SPI 80MHz 8-SOIC
DataSheet: SST25PF040B-80-4C-S2AE datasheetSST25PF040B-80-4C-S2AE Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SST25
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: 10µs
Memory Interface: SPI
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: SST25PF040B
Description

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Memory is a key component in various systems. SST25PF040B-80-4C-S2AE is a type of memory that is used in many applications. This article will discuss the application field and working principle of this type of memory.

Application Field

SST25PF040B-80-4C-S2AE is a non-volatile memory, which is widely used in many applications. This type of memory has the advantage of being able to store data for an extended period of time without the need for power. It can be used in systems such as industrial automation, medical and automotive equipment, commercial products, consumer electronics, and embedded systems.

This type of memory is also widely used in various types of computers, such as desktops and notebooks. It is used as the main memory chip in desktops and notebooks, as it allows for faster boot-up, faster access to data, and larger data storage capacity. Additionally, SST25PF040B-80-4C-S2AE can be used in other applications such as IoT, energy and security systems, and cryptography.

Working Principle

The working principle of SST25PF040B-80-4C-S2AE is to use static random access memory (SRAM) technology. This is a non-volatile memory technology which stores information in the form of electric charges and electric current. It is designed to operate in multiple states, so that data can be accessed repeatedly without any loss of data.

SST25PF040B-80-4C-S2AE uses a triple-level cell (TLC) technology, which allows for higher data storage density and superior performance. TLC technology uses three bits of data (0,1,2) instead of one bit of data (0,1). This allows for a much larger data storage capacity and faster data access speeds. Additionally, TLC technology consumes less power than traditional memory technologies such as DRAM, so it is more power efficient.

The other key feature that SST25PF040B-80-4C-S2AE offers is its write protect feature. This feature allows users to protect the data stored in the memory from being accidentally overwritten or erased. This is especially beneficial in mission-critical applications, where any accidental overwriting or erasing of data can lead to serious consequences.

Conclusion

SST25PF040B-80-4C-S2AE is a type of non-volatile memory that is used in many applications. It uses static random access memory (SRAM) technology and triple-level cell (TLC) technology, which allows for higher data storage density and superior performance. Additionally, the write protect feature of SST25PF040B-80-4C-S2AE allows for data to be protected from accidental overwriting or erasing. This type of memory is widely used in computers, industrial automation, medical and automotive equipment, commercial products, consumer electronics, and embedded systems.

The specific data is subject to PDF, and the above content is for reference

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