SST25WF080B-40I/SN

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SST25WF080B-40I/SN is a high-quality, reliable non-volatile memory model which makes use of different control techniques and its built-in features to remain functional even when the power supply is cut off. It belongs to the class of Flash Memories, i.e., a type of semiconductor-based Storage, and is a one-time-programmable storage format, wherein data is written, erased, and then read by using dedicated circuit elements to apply and control the appropriate levels of power to the right location. Let us understand in detail the applications and working principle of the SST25WF080B-40I/SN Flash Memory.

Applications:

The SST25WF080B-40I/SN Flash Memory is commonly used in different applications such as Automotive electronics, Consumer electronics, Medical electronics, Telecom, and Mil/Aero sectors. It is suitable for use in general industrial and automotive production environments and sometimes even in the most extreme conditions. Its robustly designed on-chip ECC (Error-Correcting Code) feature facilitates industry-leading reliability, whereas its serial interface uses SO8/SSOP and SOP8/TSOP packages. The 128Mbit density makes this IC an effective and energy-efficient solution for multiple tasks. Moreover, it also features a typical write-performance of 3 ms and is compatible with different programming and programming software.

Working Principle:

The working principle of the SST25WF080B-40I/SN Flash Memory can be explained in three distinct components, namely, the Memory Cell Array, the Low-Voltage Power Switch, and the Control Logic. The memory cell array consists of cells that are built up by series-connected transistors, wherein one transistor acts as control and can be used to switch its corresponding cell’s bits as needed. The low-voltage power switch sources and sinks power to the cells, and its usage of the multiplex technique allows it to reduce the overall power consumption. Finally, the control logic is responsible for managing the state of the power switch and providing commands to perform functions such as Erase, Program and Read.

At a physical level, the SST25WF080B-40I/SN Flash Memory uses floating-gate transistors to make the memory cells, wherein the electrons are trapped on its gate and fabricates the information that is stored in the ASIC. The floating-gate transistors are comprised of two back-to-back transistors that are connected in series. The control transistor acts as a switch allowing the charge to be moved on and off the floating-gate. According to the analog-to-digital conversion, the voltage levels on the floating-gate transistor are read, interpreted, and written to a particular memory location.

In-order to protect against environment-induced data corruption, the SST25WF080B-40I/SN Flash Memory also features a built-in ECC (Error-Correcting Code) that can correct 1-bit errors and detect up to 2-bit errors in blocks of 64 bytes. This allows for accurate and efficient storage and retrieval of information. This chip also boasts of Endurance of 10,000 Program/Erase Cycles, making it known as an extremely reliable form of non-volatile memory model.

Conclusion:

Overall, the SST25WF080B-40I/SN Flash Memory is a high-quality, reliable non-volatile memory model that offers a wide range of application possibilities in the areas of Automotive Electronics, Consumer Electronics, Medical Electronics, Telecom, and Mil/Aero sectors. It is suitable for use in general industrial and automotive production environments and even in the most extreme conditions. Its robustly designed on-chip ECC feature facilitates industry-leading reliability and endurance, enabling efficient and accurate storage and retrieval of data, and therefore makes it a desirable choice for many.

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