SST26VF016BAT-104I/SM Allicdata Electronics
Allicdata Part #:

SST26VF016BAT-104I/SM-ND

Manufacturer Part#:

SST26VF016BAT-104I/SM

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 16M SPI 104MHZ 8SOIJ
More Detail: FLASH Memory IC 16Mb (2M x 8) SPI - Quad I/O 104MH...
DataSheet: SST26VF016BAT-104I/SM datasheetSST26VF016BAT-104I/SM Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SST26 SQI®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (2M x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 1.5ms
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIJ
Base Part Number: SST26VF016
Description

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SST26VF016BAT-104I/SM is a 16Mbit erasable programmable memory device, which has been produced by the global leading microelectronics manufacturer, Microchip. It is a highly integrated, low cost, CMOS EEPROM that can store up to 16384 kilobytes of data. This chip is designed for the application that needs to store a large amount of data. It features a 1MByte erase buffer, an erase/program cycle of 1,000,000 and an operating temperature range from -55°C to +125°C. This product is ideal for use in automotive, industrial, medical and consumer electronic applications.

The application field of this device includes automotive, communication systems, industrial automation, medical electronics, consumer electronics, utility metering, portable measurement equipment and other products, due to its many advanced functions. For example, in automotive electronic systems, it is suitable for various ammeter, ECU (Pressure Control Unit), ECM (Engine Control Module), ABS ( Anti-lock Braking System). In the communications industry, this device can be used in mobile phone base station, microwave station, wireless base station, wireless terminal and other mobile communication equipment.

SST26VF016BAT-104I/SM uses a voltage of 2.7V-3.6V, and its working principle is two key technologies, charge pump P-N junction and CMOS EEPROM. These two technologies make it possible to store large amounts of data. The charge pump technology uses two transistors to provide a high voltage pulse to erase a page of data. It can provide up to 16megabits of data storage in a single chip, which is twice the capacity of FLASH memory. At the same time, the chip can also read and write data at high speed.

The CMOS EEPROM is used in the data storage part of the device. It uses an Operating Voltage of 2.7V to 3.6V and provides a programming time of 10ms -30 ms. This device will allow a wide range of data to be stored, ranging from 8 bits of data to 16Kbytes of data. The device is also able to perform random read and program operations at high speed.

In summary, SST26VF016BAT-104I/SM is an excellent memory storage device with high storage capacity, and it is suitable for various applications. Its features such as low power consumption, fast speed and wide range of data storage capacity, make it a good choice for many types of devices. Its charge pump and CMOS EEPROM technologies make it ideal for all kinds of data storage, including automotive, communications and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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