SST26VF032BA-104I/SM

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The SST26VF032BA-104I/SM is an advanced memory storage device developed by the American-based Solid State Technology Corporation that is used in a variety of applications. This high-performance nonvolatile memory device is ideal for industrial, embedded, and consumer applications that require proportional read and write speeds as well as very long retention times.

The device incorporates four 26V flash memory densities with features such as sector protection and block locking that provide greater protection of sensitive or important data. The SST26VF032BA-104I/SM also supports low power operation with advanced low-power sleep modes that extend battery life and provide greater design flexibility. Additionally, the memory device is designed to meet the stringent Safety Integrity Level (SIL) and JEDEC reliability specifications.

The SST26VF032BA-104I/SM is a low voltage, low power, single-chip Flash memory device. It is ideal for a wide range of applications including consumer electronics, automotive systems, industrial controls, data logging, and medical equipment. The integrated Flash memory technology provides fast nonvolatile storage for data and software code, as compared to traditional EEPROM and SRAM memory devices.

The SST26VF032BA-104I/SM Flash memory device utilizes a unique combination of Floating Gate cells and advanced CMOS technology which enable it to provide high-speed write and read operations up to 40 MHz, heavy-duty erase features, and long endurance write/erase cycles. Additionally, the device supports multiple SPI bus modes, allowing it to be easily integrated into a wide variety of embedded systems.

In terms of its working principle, the SST26VF032BA-104I/SM is a floating gate device featuring a tunnel oxide stack. As a result, the device operates at 1.8V or 3V voltages which enable faster write speeds, greater data integrity, and lower power consumption. The tunnel oxide stack of the device is designed to provide a long retention time of up to 200 years. Additionally, the device supports an advanced sector protection feature which is used for protecting stored data from external sources.

The SST26VF032BA-104I/SM memory device is an ideal storage solution for any application requiring reliable non-volatile data storage and data integrity, such as industrial control systems, embedded systems, data logging, consumer electronics, and automotive systems. The device allows for faster write speeds, lower power consumption, and greater data integrity due to its advanced tunnel oxide stack and advanced low-power sleep modes. Additionally, the SST26VF032BA-104I/SM supports a long retention time of up to 200 years as well as sector protection feature that ensure data integrity.

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