SST26VF064B-104I/TD

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Application Field and Working Principle of SST26VF064B-104I/TD Memory

SST26VF064B-104I/TD memory is a type of non-volatile flash memory that is commonly used in digital electronics. It is manufactured by Silicon Storage Technology (SST). The SST26VF064B-104I/TD is a 64 megabit (8 megabytes) NOR flash memory device with an access time of 70 ns.

Features

The SST26VF064B-104I/TD memory offers the following features:

• Low pin count: 20 pins
• Low power consumption
• Data retention of up to ten years
• Compact package size
• High speed read performance
• Supports 8/16/32-bit instruction set
• Can sustain up to 50 thousand erase/program cycles

Application Field

The SST26VF064B-104I/TD memory is commonly used in a wide range of embedded applications, such as industrial control, consumer electronics, automotive systems, medical systems, and wireless devices. It is ideal for applications that require high reliability, long data retention, or fast read performance.

In industrial control applications, the SST26VF064B-104I/TD memory can be used to store program code and data. It is ideal for applications that require long-term data persistence, such as machine control parameters and calibration data.

In consumer electronics, the SST26VF064B-104I/TD can be used to store firmware, or for large file storage. In automotive systems, the SST26VF064B-104I/TD can be used to store navigation data, diagnostic logs, or system parameters.

The SST26VF064B-104I/TD is also well suited for medical systems, such as patient monitoring systems and medical imaging. It is ideal for applications that require the storage of sensitive patient data and require long-term data retention.

Working Principle

The SST26VF064B-104I/TD memory is a type of non-volatile flash memory, meaning that it can retain data even when power is removed. This is achieved through the use of a floating gate technology, in which electrons are trapped in a floating gate, which is insulated from the substrate. This creates a non-volatile storage layer, which retains data even when power is removed.

Writing data to the SST26VF064B-104I/TD memory is achieved through the use of Fowler-Nordheim tunneling. This process involves applying a high voltage to the floating gate. This causes the electrons to tunnel through the insulating layer, changing the state of the floating gate, thus writing data to the memory.

Reading data from the SST26VF064B-104I/TD memory is much simpler than writing. This is done by simply applying a lower voltage to the floating gate, which causes the electrons to tunnel out of the floating gate. This change in voltage is detected, and the data can be read.

Conclusion

The SST26VF064B-104I/TD memory is a type of non-volatile flash memory that is commonly used in digital electronics. It is ideal for applications that require high reliability, long data retention, or fast read performance. It is commonly used in embedded applications, such as industrial control, consumer electronics, automotive systems, medical systems, and wireless devices. The working principle of SST26VF064B-104I/TD memory relies on the use of a floating gate technology, which creates a non-volatile storage layer, and the use of Fowler-Nordheim tunneling to read and write data.

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