SST2907AHZGT116 Discrete Semiconductor Products

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	200mW
Frequency - Transition:	200MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SST3

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The SST2907AHZGT116 is an NPN Bipolar Junction Transistor (BJT) suitable for use in various electronic applications. It is a single component, meaning it is a single or monolithic device composed of several transistors and other components which share a single semiconductor substrate. The SST2907AHZGT116 has its own specific usage, and is designed to be used in amplifying or switching applications, ranging from RF and microwave devices to consumer electronics such as televisions and radios.BJTs work by creating a channel or “junction” between two oppositely charged semiconductor layers. This junction is where current flows, and by controlling the current flowing through the junction, the output signals can be amplified, switched, or rectified to create the desired electrical oscillations and signals. The two semiconductor layers, the base and collector, are the main components of a BJT, and the SST2907AHZGT116 takes advantage of this structure to provide efficient amplifying power.The SST2907AHZGT116 has a maximum collector-emitter voltage of 30V, providing it with the ability to amplify or switch signals up to almost 30V in voltage. It features a low saturation voltage, meaning that it has a low voltage drop when current is passed through the collector-emitter path. This means it has excellent switching performance, making it suitable for pulsed applications where the input voltage needs to be accurately and swiftly converted to the desired output. The SST2907AHZGT116 also has a high current gain, or hFE, of 125. This means it can powerfully amplify relatively small signals, while its low PNP transition frequency of 55 MHz makes it ideal for use with RF, microwave and other fast-switching applications. It is also able to withstand high collector current spikes, making it suitable for energy-intensive applications.Overall, the SST2907AHZGT116 is an ideal choice of Bipolar Junction Transistor for a range of applications which require accurate and efficient signal amplification and switching. Its combination of extreme switching accuracy, high current gain and high voltage capability make it an attractive choice for a wide range of electronics applications, from RF and microwave devices to consumer electronics.

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