Allicdata Part #: | SST39LF010-45-4C-MME-ND |
Manufacturer Part#: |
SST39LF010-45-4C-MME |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 1M PARALLEL 34WFBGA |
More Detail: | FLASH Memory IC 1Mb (128K x 8) Parallel 45ns 34-W... |
DataSheet: | SST39LF010-45-4C-MME Datasheet/PDF |
Quantity: | 1000 |
Series: | SST39 MPF™ |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | 20µs |
Access Time: | 45ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 34-WFBGA |
Supplier Device Package: | 34-WFBGA (6x4) |
Base Part Number: | SST39LF010 |
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The SST39LF010-45-4C-MME is a type of non-volatile memory that is used in a wide range of applications in the electronics industry. It is a 1M-byte (1,048,576 bytes) Flash EEPROM, designed and manufactured by Silicon Storage Technology, Inc. (SST). The device is a family member of the Memory Products line, which also includes SST-related Flash memory and memory peripherals. It is an 8-bit structure and a 45nm process size.
The SST39LF010-45-4C-MME offers excellent performance and features a fast program/erase speed of 25µs/7µs (150uA/Vcc). The low power consumption of 50µA is an additional benefit. The product also features a 4K byte sector size, as well as bottom sector protection, Data during TDO, and real-time clock (RTC). It has been designed for a wide array of applications, including automotive, industrial and consumer products, along with a variety of embedded systems.
The SST39LF010-45-4C-MME is specifically designed for use in applications that require durability, scalability, and reliability. This device comes in a wide array of packages and is available in 128K and 256K versions. It has an operating temperature range of -40°C to +85°C and can withstand up to 20 years of data retention, making it a reliable and robust device.
The working principle of the SST39LF010-45-4C-MME is relatively straightforward. It is composed of multiple cells, each containing a single memory bit. Data is written to the cells by applying a voltage to the bit line. If a “High” voltage is applied, the cell is set to a logic “1”, while “Low” voltage sets the cell to “0”. To erase the data, the cells are first exposed to a flash erase cycle. Then, a bulk erase cycle is applied to the entire array. The memory cells are then reset to their original state and the data can then be re-written.
The SST39LF010-45-4C-MME is a versatile memory device that is suitable for a wide range of applications. It is capable of providing reliable, durable storage with excellent performance. Its robust design, fast access time, and low power consumption make it a great solution for embedded solutions, automotive designs, and other industrial applications.
The specific data is subject to PDF, and the above content is for reference
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