SST39LF020-55-4I-NHE Allicdata Electronics
Allicdata Part #:

SST39LF020-55-4I-NHE-ND

Manufacturer Part#:

SST39LF020-55-4I-NHE

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 2M PARALLEL 32PLCC
More Detail: FLASH Memory IC 2Mb (256K x 8) Parallel 55ns 32-P...
DataSheet: SST39LF020-55-4I-NHE datasheetSST39LF020-55-4I-NHE Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SST39 MPF™
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Write Cycle Time - Word, Page: 20µs
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC
Base Part Number: SST39LF020
Description

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Memory plays an integral role in the successful operation of modern technology, and the SST39LF020-55-4I-NHE is no different. This form of nonvolatile memory is ideal for long-term storage, as it is able to retain its contents even when the power is shut off. SST39LF020-55-4I-NHE allow for use with higher speeds and smaller package sizes, making them ideal for applications where size and speed are a concern.

The device consists of two components, a static RAM and a Flash memory bank. The static RAM is used for storing frequently accessed data during regular system operation. This allows the processor to quickly retrieve the data stored in the static RAM, eliminating the need to access the Flash memory. The Flash memory bank is used to store the data that is not accessed often or that needs to be stored in the long term. The Flash memory is programmed or stored using a programming device, such as an EPROM programmer.

The device can be found in applications that require low power consumption, such as automotive applications and embedded systems. It is also suitable for applications such as cellular phones, PDAs and game consoles. The storage capabilities of the device can be enhanced by adding other memory devices, such as SRAMs and DRAMs, to increase storage capacity and reduce access time.

The working principle of the device is fairly simple. The static RAM is powered by 3.3V and a control signal is sent to the static RAM to initiate a read or write operation. When the control signal is set to "write", the data that needs to be stored is written to the static RAM. When the control signal is set to "read", the data stored in the static RAM is retrieved and sent to the processor.

When the processor needs to access data that is not stored in the static RAM, it will send a control signal to the Flash memory bank and the requested data will be read from the Flash memory bank and returned to the processor. The Flash memory bank is powered by 5V and operates at high speeds. Before data can be written to the Flash memory, it first needs to be erased using the programming device.

The SST39LF020-55-4I-NHE is a versatile and efficient device that can be used in many applications. Its low power consumption, high speed, and small package size make it ideal for applications where these properties are necessary. The device is relatively inexpensive and provides a reliable storage option for applications that require the storage of data in the long term.

The specific data is subject to PDF, and the above content is for reference

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