SST39VF040-70-4C-WHE-T

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The SST39VF040-70-4C-WHE-T is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) memory device. It is used to store program code, data and other information. Unlike ROM (Read Only Memory), EEPROM can be erased and rewritten electronically without the need to physically erase the memory. This makes it ideal for applications that require frequent reprogramming or updating.

The SST39VF040-70-4C-WHE-T is a low-voltage device with a wide operating voltage supply range of +2.7V to +3.6V. It has an extended temperature range of -40°C to +125°C. It has a storage capacity of 4096 Kbits (512K x 8) and is available in both 4Mbit and 8Mbit packages. The device is offered in 1.4" and 2" packages with a 8mm or 14mm pitch.

The device has high speed access times of 70ns and is available in the industry-standard byte-wide SOIC pinout. It has a typical fast access time of 70 nanoseconds and a typical read/write cycle time of 135 nanoseconds. The power consumption of the device is low, making it ideal for use in battery-operated applications.

The SST39VF040-70-4C-WHE-T has a wide application field and can be used in different types of embedded systems such as industrial control and embedded design systems, automotive systems, telecommunications systems, medical systems and others. It is widely used in systems where unpredictable changes to the data or code need to be made quickly and efficiently. The device also finds use in field-programmable gate array (FPGA) and application-specific integrated circuit (ASIC) design.

The SST39VF040-70-4C-WHE-T’s working principle revolves around a two-dimensional cross-point memory array. The memory array consists of two groups of parallel horizontal lines and two groups of parallel vertical lines. This cross point array is formed by a number of intersecting points which can be accessed individually and programmed with either a ‘1’ or a ‘0’. The data is stored in the memory array in an electrically erasable format.

The device also includes an array of write enable (WE) and output enable (OE) circuits that control the data flow between the cross-point array and the I/O pins. The WE circuit controls the data write operation and the OE circuit controls the data read operation. The device can operate in multiple modes such as Read Mode, Auto Increment Mode, Page Mode, and Sequential Mode.

The SST39VF040-70-4C-WHE-T is a feature rich, highly reliable and cost-effective memory device. It is a flexible, low-power solution that can be used in a variety of real-time applications. Its wide range of applications and low power consumption makes it the ideal choice for many embedded applications.

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