SST39SF040-70-4C-NHE-T Allicdata Electronics
Allicdata Part #:

SST39SF040-70-4C-NHE-TTR-ND

Manufacturer Part#:

SST39SF040-70-4C-NHE-T

Price: $ 0.88
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 4M PARALLEL 32PLCC
More Detail: FLASH Memory IC 4Mb (512K x 8) Parallel 70ns 32-P...
DataSheet: SST39SF040-70-4C-NHE-T datasheetSST39SF040-70-4C-NHE-T Datasheet/PDF
Quantity: 1000
750 +: $ 0.79166
Stock 1000Can Ship Immediately
$ 0.88
Specifications
Series: SST39 MPF™
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 20µs
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC (11.43x13.97)
Base Part Number: SST39SF040
Description

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Memory is a type of electronic device that is used to store and quickly access data. SST39SF040-70-4C-NHE-T is a type of memory chip designed to provide a high degree of flexibility and efficient data storage. This particular chip is ideal for applications where both performance and memory density are key.

The SST39SF040-70-4C-NHE-T chip is a 4 megabit Flash Memory device designed to operate at single supply voltages from 3.3V to 5V. It offers one of the highest density Flash memory devices available in the 4 megabit range. The device incorporates a microcontroller interface and memory array making it suitable for a variety of applications. The device can be used in a wide range of embedded systems.

The memory chip includes a 70-MHz bus with a maximum data rate of up to 40-Mbps. This enables the device to read data from and write data to a large amount of storage space quickly and efficiently. It can also be used as an external memory in a digital media player or a digital recorder. The device also offers low power consumption of only 1.5mA, making it suitable for low power applications.

One of the major features of the SST39SF040-70-4C-NHE-T memory chip is its use of a single supply voltage source. This makes it ideal for applications where both performance and memory density are key. This also helps reduce the power requirement in large applications as the device can be powered directly from the same voltage source.

The chip also has a write protect feature to prevent accidental writes from corrupting data. It also features built-in write protection that prevents data loss due to power failure. The chip also offers additional protection against electro-static hazards. In addition, the device provides error detection and correction to help reduce the risk of data corruption.

In terms of its applications, the SST39SF040-70-4C-NHE-T memory chip is suitable for a wide range of uses. These include applications in automotive and medical industries, as well as use in industrial and consumer electronics. The device is also well-suited for embedded systems in which high memory density and high performance are required. In addition, the device is suitable for use in applications where low power is of utmost importance.

The working principle behind the SST39SF040-70-4C-NHE-T memory chip is based on the notion of “volatile memory.” This means that the data is retained in RAM memory when powered, rather than being stored permanently. The data is written to the chip from the computer or application, and read back as needed. If the power is suddenly cut off or interrupted, then the data will be lost.

Overall, the SST39SF040-70-4C-NHE-T is a versatile and efficient memory chip with applications across an array of industries. It offers excellent performance and high memory density, while maintaining a low power consumption and providing additional safety features. This makes it an ideal choice for applications requiring both performance and memory density.

The specific data is subject to PDF, and the above content is for reference

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