Allicdata Part #: | SST39VF3201-70-4C-EKE-ND |
Manufacturer Part#: |
SST39VF3201-70-4C-EKE |
Price: | $ 2.44 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 32M PARALLEL 48TSOP |
More Detail: | FLASH Memory IC 32Mb (2M x 16) Parallel 70ns 48-T... |
DataSheet: | SST39VF3201-70-4C-EKE Datasheet/PDF |
Quantity: | 210 |
1 +: | $ 2.21760 |
25 +: | $ 2.03767 |
Series: | SST39 MPF™ |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 32Mb (2M x 16) |
Write Cycle Time - Word, Page: | 10µs |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 48-TSOP |
Base Part Number: | SST39VF3201 |
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Memory: SST39VF3201-70-4C-EKE
SST39VF3201-70-4C-EKE is a type of memory, developed and manufactured by an American multi-national corporation Silicon Storage Technology Inc. It is an improvement over the previous version and is hailed as the highest density memory on the market.
Application Field
The SST39VF3201-70-4C-EKE memory device is designed to be a reliable storage medium for home, enterprise and industry applications. The device features 4-bit wide bus, 100ns word access time, 4-Kbits of array storage, 1.2 volt low voltage and temperatures range of 0 to 60 degrees Celsius. Furthermore, the device has a low standby current poise and is pin-to-pin compatible with standard 2.7V Flash versions.
The advantages of the SST39VF3201-70-4C-EKE memory device come in its ability to be used in a wide array of applications. These include industrial automation, medical, PC/laptop, consumer appliances and automotive applications. The device is quite useful in scenarios where large amounts of data need to be stored which cannot be done on flash storage due to the limitations in channel density per chip. It also provides a robust, low-power storage solution that can withstand high operating temperatures.
Working Principle
The SST39VF3201-70-4C-EKE memory device works on a three-transistor-cell size, which is a combination of erase, program and read operations. This allows for higher data density, improved performance, and lower power consumption. The erase operation of the SST39VF3201-70-4C-EKE power system is initiated by the application of a chemical passivation layer to the three-transistor-cell and the voltage boost for the erase cycle. The erase operations also consist of a thermal anneal operation and a refreshing operation.
The programming operation of the SST39VF3201-70-4C-EKE is initiated by applying the correct voltages and pulses to the cells. These pulses vary in duration and amplitude depending on the type of data being programmed onto the memory device. The read operation of the memory device is usually accomplished using a standard CMOS logic signal in order to verify the data stored on it.
Conclusion
The SST39VF3201-70-4C-EKE memory device is a high density memory device with a wide range of applications across many industries. It is reliable and uses low power consumption due to its three-transistor-cell design. The device works on the basis of erase, read and program operations for data storage and verification. This memory device is a great choice for scenarios where large amounts of data need to stored or processed quickly.
The specific data is subject to PDF, and the above content is for reference
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