Allicdata Part #: | SST38VF6401BT-70I/TV-ND |
Manufacturer Part#: |
SST38VF6401BT-70I/TV |
Price: | $ 3.34 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 64M PARALLEL 48TSOP |
More Detail: | FLASH Memory IC 64Mb (4M x 16) Parallel 70ns 48-T... |
DataSheet: | SST38VF6401BT-70I/TV Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 3.03685 |
Series: | SST38 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 64Mb (4M x 16) |
Write Cycle Time - Word, Page: | 10µs |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 48-TSOP |
Base Part Number: | SST38VF6401 |
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The SST38VF6401BT-70I/TV is a high-density 64-Mbit flash memory device. It is type-classified as a memory device, as it stores and retrieves digital information. The device utilizes a split-gate Flash process cell, which provides greater performance and reliability when compared to traditional floating-gate flash processes.
The SST38VF6401BT-70I/TV has many applications, including data storage, code storage, non-volatile memory, secure storage, and embedded systems. It is designed for use in applications that require low power, and features advanced power management features such as the ability to enable, disable, and scale a low power standby mode. The device can be used for both data storage and code execution, making it a widely applicable memory device.
The SST38VF6401BT-70I/TV’s working principle is based on the Flash memory architecture. Flash memory is a non-volatile type of memory, which means it retains its stored information even when the power is turned off. This is in contrast to volatile memory, which requires constant power to preserve stored data. Flash memory is organized into memory cells which consist of a control gate, a floating gate, and a source or drain.
To store data in a Flash memory device, the data is written to the control gate and then to the floating gate. When the control gate receives the data, an electromagnetic charge is released, which ions the floating gate to a higher conductivity level. This creates an electric field between the two gates, which performs the action of writing information in the form of bits: 0s and 1s.
To read from the memory, the control gate is pulsed. This pulsing action creates a voltage gap between the source and the drain, which creates a current which reads from the memory cell. This process is known as Fowler-Nordheim tunneling, and it is how most Flash memory devices work.
The SST38VF6401BT-70I/TV is a versatile, high-density 64-Mbit Flash memory device, which has a variety of applications in data storage, code storage, non-volatile memory, secure storage, and embedded systems. The device utilizes the Flash cell architecture to store and retrieve data, using the Fowler-Nordheim tunneling principle to read from the memory cells. With its advanced power management features, the SST38VF6401BT-70I/TV is a great choice for low-power applications.
The specific data is subject to PDF, and the above content is for reference
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