SST39VF1602-70-4I-B3KE-T

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The SST39VF1602-70-4I-B3KE-T is a memory device used in a variety of applications. This device is a multi-way, low-power Static Random Access Memory (SRAM). It is built with a deep high-speed CMOS technology, offering fast access and low power usage.

The SST39VF1602-70-4I-B3KE-T provides a fast access time of 70ns and features 4M bits of memory. It is capable of storing 2M words of data, with each word being 16 bits wide. The device is organised in a 2K deep by 2K wide array of cells. The device can be read from, programmed or erased at full speed.

The SST39VF1602-70-4I-B3KE-T offers an Automatic Power-Gating System, a feature which provides power savings and improved thermal performance. This feature allows the SRAM to be shut off when it is not being used. This helps to reduce overall power consumption and keep the device running cooler.

The SST39VF1602-70-4I-B3KE-T is suitable for a variety of applications. These include embedded control systems, cellular communications, set top box control, graphic control systems, portable items, automotive applications, and other consumer applications. These applications require low power use with fast access times and the SST39VF1602-70-4I-B3KE-T is well suited for these applications.

The SST39VF1602-70-4I-B3KE-T works by using multiple address and control inputs. The address and control inputs are buffered and decoded to access the memory array. The address inputs are also used for auto-power-gating control, which enables the SRAM to be shut off when it is not being used. Additionally, a decouple pin is available to reduce power consumption in idle mode.

The SST39VF1602-70-4I-B3KE-T has various features to improve reliability. These include Error Correction Code (ECC), cyclic redundancy checking (CRC), and power-on-reset (POR). ECC is used to detect and correct single-bit memory errors. CRC is used to detect multiple-bit memory errors. The power-on-reset (POR) ensures a clean operation when the device is reset.

In conclusion, the SST39VF1602-70-4I-B3KE-T is a low-power and high-performance SRAM device, suitable for a variety of applications. It offers fast access time and low power consumption, making it a reliable memory solution. It also provides multiple levels of reliability, such as ECC, CRC, and POR. The auto-power-gating system helps to reduce power consumption, making it an ideal choice for embedded control systems and other applications that require low power use and high speed.

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