SST39VF6402B-70-4C-EKE-T

Series:	SST39 MPF™
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	64Mb (4M x 16)
Write Cycle Time - Word, Page:	10µs
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP
Base Part Number:	SST39VF6402B

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

<p>The SST39VF6402B-70-4C-EKE-T is an electrically erasable programmable read-only memory (EEPROM) device built with a low-voltage process and is used in a variety of memory applications. It features 1,000,000 write/erase cycles, a maximum read frequency of up to 15MHz, and a temperature range of -40°C - 70°C. With a low voltage interface and multiple organizations, the device is ideal for applications requiring low-voltage and high speed operation.</p><p>The device is organized as 70,000 x 8 bits, utilizes a 1.8V/2.7V/3.3V single-supply voltage and operates from a maximum speed of 15MHz. The device also provides improved pulse width performance and fast erase/write times. The EEPROM also features byte select and sector Erase for all bit lines within a sector, making it ideal for applications requiring low power memory access.</p><p>The device is designed for a variety of embedded applications. Any application that requires fast and efficient data manipulation, such as processor control, address decoding, user settings, security codes, and memory functions, can benefit from this USB-compatible memory device. This device also offers improved erase/write performance, more program/erase cycles, better endurance, and greater reliability as compared to other E2PROMs.</p><p>The working principle of the SST39VF6402B-70-4C-EKE-T is based on the concept of Fowler-Nordheim (FN) tunneling. FN tunneling is a process where electrons, accelerated by a high electric field intensity, are driven through a thin dielectric barrier to reach the floating gate. The electrons trapped in the floating gate of the EEPROM are what gives the unit its memory characteristics.</p><p>The FN tunneling action is enabled/disabled by using a special control gate as part of the device\'s structure. By applying different gate voltages to the control gate, electrons can be injected onto (write) or removed from (erase) the floating gate. The FN tunneling effect is reversible, so the complete erase and write cycle can be performed many times, providing more than a million write/erase cycles.</p><p>With its advanced features, high-speed operation, low power consumption, multi-organization support, wide temperature range, and a million write/erase cycles, the SST39VF6402B-70-4C-EKE-T EEPROM is an ideal memory solution for embedded applications. </p>

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description