SST39WF1601-70-4I-MBQE-T

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The SST39WF1601-70-4I-MBQE-T is a high-speed, low-power Static Random Access Memory (SRAM) chip built on a 0.25 micron CMOS technology and operates on +3.3V. The device is capable of switching up to 40-megahertz, offering a throughput of approximately 10 million transactions per second. Furthermore, the chip includes on-die ECC and EDC circuitry supporting up to 24-bit error correction and single event upset protection.

The device comes in a plastic modern small outline integrated circuit (SOIC) 44-pin package and has a footprint of just 8mm x 8mm. This means that the device is well-suited for space-constrained applications. It has a typical power consumption of 100mW, making it ideal for battery-powered applications without compromising performance.

The SST39WF1601-70-4I-MBQE-T contains 4 megabits (Mbits) of SRAM and is organized as 2,097,152 words by 8 bits. It’s designed for high-volume applications, with an access time (t ACC) of 70ns, supporting a wide range of operating frequencies, from 5 to 40 MHz. The device includes separate chip-select (/CS) and output-enable (/OE) inputs that allow independent device selection and output data control.

The SRAM is divided into two banks of 256K words each and is capable of simultaneous access on both banks while in the low-power standby mode. A write-protect (/WP) input can be used to disable any write operations to the memory. The device is byte-wide and includes four address buffers, eliminating the need for challenging wiring practices.

The chip includes on-die ECC and EDC circuitry which allows for the detection of single or multiple-bit errors and enables correction of single-bit errors. The device also features extended temperature range with an operating temperature of -40 degree Celsius to +85 degree Celsius.

The SST39WF1601-70-4I-MBQE-T chip is ideal for applications such as embedded systems, industrial automation and control, telecom systems and low-power system designs. It can also be used in industrial design or any other application that requires a large onboard memory storage and fast data access times.

In conclusion, the SST39WF1601-70-4I-MBQE-T is a high-performance SRAM that provides low-power operation, extended temperature range, on-die ECC and EDC circuitry, and a small form factor. It is suitable for use in a wide variety of applications, especially those requiring a large on-board memory and fast data access times.

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