SST39WF400B-70-4C-MAQE-T Allicdata Electronics
Allicdata Part #:

SST39WF400B-70-4C-MAQE-T-ND

Manufacturer Part#:

SST39WF400B-70-4C-MAQE-T

Price: $ 1.11
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 4M PARALLEL 48WFBGA
More Detail: FLASH Memory IC 4Mb (256K x 16) Parallel 70ns 48-...
DataSheet: SST39WF400B-70-4C-MAQE-T datasheetSST39WF400B-70-4C-MAQE-T Datasheet/PDF
Quantity: 1000
2500 +: $ 0.99931
Stock 1000Can Ship Immediately
$ 1.11
Specifications
Series: SST39 MPF™
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 40µs
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-WFBGA
Supplier Device Package: 48-WFBGA (6x4)
Base Part Number: SST39WF400B
Description

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Memory plays an important role in modern society, from consumer electronics and computers to industrial machineries. The SST39WF400B-70-4C-MAQE-T is a popular memory device in the market, due to its high performance, reliability and low cost. In this article, we will discuss the application areas and working principle of the SST39WF400B-70-4C-MAQE-T.

The SST39WF400B-70-4C-MAQE-T is a 4 Megabit (512Kx8) CMOS 3.3V Flash Memory device. It is commonly used in embedded applications such as automotive, consumer electronics and industrial components. Due to its high reliability, small footprint, low power consumption, and wide voltage range, the SST39WF400B-70-4C-MAQE-T is also one of the most popular solutions for embedded devices.

The SST39WF400B-70-4C-MAQE-T features an advanced high speed pipeline burst Flash memory architecture and a 3.3 Volt operating supply voltage. It offers a wide voltage range (1.8V to 5.5V) for programming and erase, making it ideal for applications requiring wide temperature operations. The advanced high speed pipeline burst Flash memory architecture also enables fast read and write access times.

The SST39WF400B-70-4C-MAQE-T\'s working principle is based on storing data in Flash cells. These cells are made up of floating gate transistors and two field plates. The device consists of an array of memory cells interconnected to form a matrix structure where each row of the array is associated with a row decoder and each column associated with a column decoder. When power is applied, the cells are charged and selected. Data can then be written to the cells in synchronized steps. The unique architecture of the device enables fast programming, allowing the maximum data throughput to be achieved.

The SST39WF400B-70-4C-MAQE-T is made using advanced CMOS processes, providing excellent ESD protection, low power consumption, dense packing, and wide temperature range (–40°C to +125°C). The device is also factory-programmable and when used with the appropriate system software, it supports multiple operations such as read, program, erase, and mass programming.

In conclusion, the SST39WF400B-70-4C-MAQE-T is a reliable and cost-effective Flash memory device widely used in embedded applications. Its advanced high speed pipeline burst Flash memory architecture, wide voltage range, low power consumption, factory-programmable feature and wide temperature range make it an ideal solution for embedded devices.

The specific data is subject to PDF, and the above content is for reference

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