Allicdata Part #: | SSVMUN5312DW1T2G-ND |
Manufacturer Part#: |
SSVMUN5312DW1T2G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS BRT DUAL 100MA 50V SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | SSVMUN5312DW1T2G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06716 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 187mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Base Part Number: | MUN53**DW1 |
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The SSVMUN5312DW1T2G is a 25V NPN array of seven general-purpose small signal transistors that operate in the Bipolar (BJT) Junction Transistor Arrays Pre-Biased family for applications like sensing and measurement. The SSVMUN5312DW1T2G is designed for amplification, switching, and high current applications.
Each transistor in the SSVMUN5312DW1T2G is pre-biased with a 100kΩ resistor between the base and collector to enhance the dynamic range of the transistor. This resistor also prevents any bias or integration error due to temperature variation. The SSVMUN5312DW1T2G has a maximum collector to emitter voltage of 25V, a collector current of 200mA, and a maximum power dissipation of 1W.
To utilize the SSVMUN5312DW1T2G in an application, it must first be properly biased. This is done by connecting the base of the transistor to a resistive divider network, which supplies a base bias to the transistor when it is switched on. In applications where the signal has a known voltage and current, a voltage divider can be used to generate the bias voltage for the transistor. For applications that require a low DC bias, a current signal can be used to generate the bias.
Once the SSVMUN5312DW1T2G is properly biased, it can be used for a variety of applications. It can be used as an amplifier because of its high current and power characteristics, as well as its excellent noise immunity. As an example, when used as an amplifier, the SSVMUN5312DW1T2G amplifies signals by increasing the current and/or voltage that passes through it. The SSVMUN5312DW1T2G can also be used as a switch, where it is able to switch DC or AC signals on or off. This makes it ideal for applications such as switching digital logic. The SSVMUN5312DW1T2G can also be used for sensing or measurement applications such as temperature and pressure sensors.
The SSVMUN5312DW1T2G is a versatile component that is suitable for a wide range of applications. It has a high current and power rating, making it ideal for amplification and switching. It also has excellent noise immunity, allowing it to be used for sensing and measurement. The pre-biased feature enhances its dynamic range, making it suitable for high-precision applications. The SSVMUN5312DW1T2G is an ideal component for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SSVMUN5312DW1T2G | ON Semicondu... | 0.08 $ | 1000 | TRANS BRT DUAL 100MA 50V ... |
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