ST13007 Allicdata Electronics
Allicdata Part #:

497-7458-5-ND

Manufacturer Part#:

ST13007

Price: $ 0.99
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 400V 8A TO220
More Detail: Bipolar (BJT) Transistor NPN 400V 8A 80W Through ...
DataSheet: ST13007 datasheetST13007 Datasheet/PDF
Quantity: 927
1 +: $ 0.90090
10 +: $ 0.80577
100 +: $ 0.62836
500 +: $ 0.51908
1000 +: $ 0.40980
Stock 927Can Ship Immediately
$ 0.99
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Power - Max: 80W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Description

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The ST13007 transistor is a popular electronic component often used in a variety of electronic circuits. This component is a single bipolar (BJT) junction transistor that can be used in a variety of different applications. In this article, we will discuss the application field and working principle of the ST13007 transistor.

Application Field

The application fields for the ST13007 transistor include a wide variety of low and high frequency circuits, including audio circuits, power drivers, and voltage regulators. The component can also be used in switching applications in varied driving regimes, such as AC and DC control. Due to its wide range of operating frequencies, it is suitable for the applications that require a fast switching speed. The component can also be used in amplifier circuits, rectifier circuits, motor drive circuits, and low high-side switching circuits.

Working Principle

The working principle of the ST13007 transistor is based on the movement of electrons between its three terminals - the base, collector and emitter. It is a three-terminal device with its emitter, base and collector forming two junctions - the emitter-base junction (EBJ) and the collector-base junction (CBJ). It can be used in either an NPN or PNP configuration.

In the NPN configuration, the EBJ is forward biased and the CBJ is reverse biased. In this state, current flows from the emitter to the base to the collector, creating a current amplification effect. This amplification effect can be used to control the output current in a circuit. The gain of the transistor is determined by the ratio of voltage applied to its base and emitter.

In the PNP configuration, the EBJ is reverse biased and the CBJ is forward biased. In this state, current flows from the collector to the base to the emitter, creating an inverted current amplification effect. This amplification effect can be used to control the output current in a circuit.

The ST13007 transistor also has a breakdown voltage, which refers to the voltage at which the base–collector junction of the transistor begins to conduct excessive current. This breakdown voltage is typically larger in PNP transistors than in NPN transistors.

The ST13007 transistor is also known for its high maximum current gain, which is the ratio of the collector current and base current of the transistor. This current gain helps the transistor to achieve greater amplification of the input signal. The maximum current gain of the ST13007 transistor is approximately 200.

In addition, the ST13007 transistor has a high collector-emitter voltage rating of up to 60V. This helps the transistor to handle higher voltage levels without damaging the device.

The ST13007 transistor is a popular component due to its wide operating frequency, wide range of application fields, high maximum current gain and high collector-emitter voltage rating. It is an effective component for a variety of low and high-side switching and voltage regulation circuits.

The specific data is subject to PDF, and the above content is for reference

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