STGE200NB60S Allicdata Electronics
Allicdata Part #:

497-6731-5-ND

Manufacturer Part#:

STGE200NB60S

Price: $ 19.38
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT N-CHAN 150A 600V ISOTOP
More Detail: IGBT Module Single 600V 200A 600W Chassis Mount I...
DataSheet: STGE200NB60S datasheetSTGE200NB60S Datasheet/PDF
Quantity: 1000
1 +: $ 17.61480
10 +: $ 16.24580
100 +: $ 13.87270
500 +: $ 12.59500
Stock 1000Can Ship Immediately
$ 19.38
Specifications
Series: PowerMESH™
Part Status: Active
IGBT Type: --
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 200A
Power - Max: 600W
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Current - Collector Cutoff (Max): 500µA
Input Capacitance (Cies) @ Vce: 1.56nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Supplier Device Package: ISOTOP
Description

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Introduction

The STGE200NB60S is an IGBT (Insulated Gate Bipolar Transistor) module from STMicroelectronics based on an 800V NPT IGBT2/Info series segment. It is a module consisting of four phase legs, each driven by two NPT IGBTs in a half bridge configuration. STGE200NB60S modules feature high reliability, fast switching capability, low switching loss and a low saturation voltage. The purpose of this paper is to provide an overview of the STGE200NB60S application fields and working principle for readers.

Application Fields

The STGE200NB60S module can be used in a variety of applications ranging from uninterruptible power supply (UPS) to induction heating, welding and many other industrial applications. These applications require switching of large currents with high speed and efficiency at medium and low frequencies. The 800V blocking voltage of the module is well suited for these applications, while the low saturation voltage and fast switching times greatly reduce switching losses and allow higher efficiency.

Working Principle

The STGE200NB60S is a bipolar junction transistor (BJT) with a built-in gate insulator. This allows a voltage to be applied to the gate terminal of the transistor, creating an electric field that modulates the conductivity of the transistor. STGE200NB60S modules integrate two NPT IGBTs, each in a half bridge configuration. This provides a significantly increased current carrying capacity compared to a single IGBT. By using the four legs of the module, a full bridge configuration can be achieved. Each leg of the module can be independently driven, allowing for the application of more advanced control signals.

Conclusion

The STGE200NB60S IGBT module from STMicroelectronics is an 800V NPT IGBT2/Info series segment featuring high reliability, fast switching capability, low switching losses and a low saturation voltage. It has a wide range of applications, including uninterruptible power supply (UPS), induction heating, welding and many other industrial applications. Its four legs provide unparalleled current carrying capacity and can be driven independently, allowing for the application of more advanced control signals. Understanding its application fields and working principle is essential to utilizing it fully and efficiently.

The specific data is subject to PDF, and the above content is for reference

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