Allicdata Part #: | 497-5269-5-ND |
Manufacturer Part#: |
STGE50NB60HD |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT N-CHAN 600V 50A ISOTOP |
More Detail: | IGBT Module Single 600V 100A 300W Chassis Mount I... |
DataSheet: | STGE50NB60HD Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | PowerMESH™ |
Part Status: | Obsolete |
IGBT Type: | -- |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 100A |
Power - Max: | 300W |
Vce(on) (Max) @ Vge, Ic: | 2.8V @ 15V, 50A |
Current - Collector Cutoff (Max): | 250µA |
Input Capacitance (Cies) @ Vce: | 4.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | ISOTOP |
Supplier Device Package: | ISOTOP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGBT (Insulated Gate Bipolar Transistor) has been presented as an advancement of the traditional BJT (Bipolar Junction Transistor), combining the fast switching times of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with the low on-state voltage drop of the BJT. IGBTs are voltage-controlled devices incorporating three layers of a semiconductor material under the gate insulation layer, which creates the typical characteristics of these devices.
STGE50NB60HD is a family of IGBT modules with a voltage range of 600V. The modules are designed for experienced users in order to meet the high power density and ease of mounting requirements in power applications. STGE50NB60HD is ideal for applications where high currents and high frequencies are present, like induction heating, invertors for motor drives, solar inverters, converters for solar power plants and converters for wind turbines.
The main features of STGE50NB60HD are:
- Low inductance package.
- Easy to install and mount.
- Integrated heat sink.
- High power density.
- UL certified insulation.
- RoHS-compliant.
The working principle of STGE50NB60HD IGBT is simple. Its gate terminal is used to control the current flow in the device. When the gate voltage applied is positive, the electron charge carriers are attracted to the gate, forming a channel between the collector and the emitter. This allows the current to flow from the collector to the emitter and creates a conductive path. As the voltage on the gate increases the conductive path increases, allowing a higher current to flow through the device. When the gate voltage is negative, it reduces the electron charge carriers in the channel and current flow is cut off, creating a cut-off or "off state".
Therefore, STGE50NB60HD IGBT can be used for switching in high current circuits using high frequency signals. Typical applications for such IGBT are induction heating, motor drives, photovoltaic inverters, solar power plants and wind turbines.
STGE50NB60HD IGBT modules have several advantages in comparison to other similar modules. They have high power density, due to their low inductance package and integrated heat sink. The modules are also RoHS-compliant and UL certified for insulation against voltage overload. Therefore, STGE50NB60HD IGBT modules are suitable for a wide range of high current, high frequency applications.
The specific data is subject to PDF, and the above content is for reference
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