Allicdata Part #: | 497-7011-5-ND |
Manufacturer Part#: |
STGE50NC60VD |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 50A 600V ISOTOP |
More Detail: | IGBT Module Single 600V 90A 260W Chassis Mount IS... |
DataSheet: | STGE50NC60VD Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Current - Collector Cutoff (Max): | 150µA |
Base Part Number: | STG*50NC |
Supplier Device Package: | ISOTOP |
Package / Case: | ISOTOP |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
NTC Thermistor: | No |
Input: | Standard |
Input Capacitance (Cies) @ Vce: | 4.55nF @ 25V |
Series: | PowerMESH™ |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 40A |
Power - Max: | 260W |
Current - Collector (Ic) (Max): | 90A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Configuration: | Single |
IGBT Type: | -- |
Part Status: | Obsolete |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STGE50NC60VD is an insulated gate bipolar transistor (IGBT) module that has many applications. It is suitable for use in servo drives, frequency converters, motor-control systems and other industrial applications. It is designed to be highly reliable and robust, with a maximum junction temperature of 150 degrees Celsius for use in harsh environments. This transistor module has an on-resistance of 0.3 ohms and an off-state voltage drop of 0.6 volts. It can handle a maximum operating temperature of -55 to 150 degrees Celsius and a voltage range of 6 to 60 volts.
An IGBT is a type of transistor module that combines the functions of both MOSFETs and bipolar transistors and is used in applications that need fast switching, high power, and high efficiency. It consists of two components, the emitter and the collector. The emitter has two transistors, an n-channel and a p-channel, and the collector has two transistors, an n-channel and a p-channel. The n-channel transistor works as an enhancement mode MOSFET and the p-channel as a depletion mode MOSFET. The combination of these components makes up the IGBT and allows for fast, efficient switching.
The working principle of an IGBT is similar to a MOSFET. The current flows between the emitter and the collector by way of the voltage created on the gate. When the gate voltage rises above the forward-biased p-n junction on the collector and emitter, the resistance between them decreases and the current is allowed to flow. The IGBT has two separate transistors - the p-channel and the n-channel - which can be switched on or off independently. The advantage of using two separate transistors is that it allows for better heat dissipation and better power efficiency. The module also has an insulated gate which helps to prevent unwanted current leakage.
The STGE50NC60VD IGBT module can provide power of up to 50A and voltage of up to 600V in motor-control systems, servo drives, frequency converters, and other industrial applications. It is also suitable for use in harsh environmental conditions and can withstand temperatures from -55 to 150 degrees Celsius. The module has an on-resistance of 0.3 ohms and an off-state voltage drop of 0.6V. With its high power and high efficiency, the STGE50NC60VD is an ideal choice for industrial applications.
The specific data is subject to PDF, and the above content is for reference
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