Allicdata Part #: | 497-13536-2-ND |
Manufacturer Part#: |
STN2580 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 400V 1A SOT-223 |
More Detail: | Bipolar (BJT) Transistor NPN 400V 1A 1.6W Surface... |
DataSheet: | STN2580 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 200mA, 1A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 250mA, 5V |
Power - Max: | 1.6W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | ST*2580 |
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The STN2580 is a single bipolar junction transistor (BJT) designed for amplifier and switch applications. It is an NPN transistor with a low-voltage operating range, making it a highly versatile device for many projects. The STN2580 is produced by a number of manufacturers, including STmicroelectronics, TE Connectivity, NXP, and Toshiba.
In operation, the STN2580 uses the base-collector junction to control current flow from the collector to the emitter. By applying a voltage to the base, current is allowed to flow from the collector to the emitter. This is referred to as forward biasing of the base-collector junction. When the voltage is removed, the current is blocked, and this is known as reverse biasing of the junction. The gain of the device, or hFE, is the ratio of collector current to base current.
The STN2580 is capable of amplifying signals in the frequency range of 0-500kHz and is often used as an audio amplifier in consumer electronics. It can also be employed in switching and relay applications, due to its low noise characteristics. The STN2580 can be used in applications such as computer controlled circuits, automotive systems, power supplies, and security systems.
When designing with the STN2580, it is important to choose the correct base resistor. This resistor determines the current flow through the device and should be chosen to achieve the desired output current. For medium to high power signals, it is recommended to use a resistive network consisting of two resistors in series. The emitter resistor can also be used to adjust the gain of the device, as it determines the amount of current flowing into the base.
The STN2580 is also capable of handling a wide range of voltages and currents, making it suitable for use with both AC and DC current sources. The maximum collector current is 20mA, and the maximum power dissipation is 250mW. The peak collector-emitter voltage is 30V and the peak collector-base voltage is 60V. For proper operation, the device should be mounted in an insulated package and it should be operated within the temperature range of -55 to +150 C.
In summary, the STN2580 is a single bipolar junction transistor suitable for amplifying, switching, and relaying. It is a highly versatile and reliable device, capable of operating at high frequencies with low noise. It has a low-voltage operating range with a maximum collector current of 20mA, and it can handle a wide range of voltage and current levels. The device should always be mounted in an insulated package and operated within the recommended temperature range. With care and proper design, the STN2580 can be a powerful tool in many applications.
The specific data is subject to PDF, and the above content is for reference
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