| Allicdata Part #: | STN2NE10-ND |
| Manufacturer Part#: |
STN2NE10 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 100V 2A SOT-223 |
| More Detail: | N-Channel 100V 2A (Tc) 2.5W (Tc) Surface Mount SOT... |
| DataSheet: |  STN2NE10 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | SOT-223 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 305pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
| Series: | STripFET™ |
| Rds On (Max) @ Id, Vgs: | 400 mOhm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The STN2NE10 MOSFET is a single-ended, insulated gate field effect transistor (FET) used in power management. It’s commonly used in devices such as computers, televisions, cell phones and other electronic components. The STN2NE10 is mostly used in power supply designs because of its low on-resistance and low threshold voltage.
The STN2NE10 works by using an oxide layer to form a gate between the source and the drain. This oxide layer acts as an insulator to prevent a current flow between the two. The gate can be controlled by changing the voltage on the gate. When the voltage is applied, it creates a conductive channel between the source and the drain allowing the current to flow.
The STN2NE10 is typically used in power regulation applications. It can provide high current capacity with low on-state resistance and low switching loss. It is also well-suited for power management applications such as motor control, power supply and battery charging. The STN2NE10 also has a low gate threshold voltage, making it useful for low voltage applications.
Because of its low on-resistance, the STN2NE10 is ideal for high current applications. The low voltage requirement and the high current capacity can be used to reduce power consumption and improve efficiency. In addition, the STN2NE10 is well-suited for power management applications because of its high data transfer rate, low standby power requirement and low on-conductance.
The STN2NE10 also has several advantages over other types of FETs. It has a higher current density and faster switching speed. It also operates over a wide temperature range. Finally, it exhibits excellent immunity to electromagnetic interference (EMI).
The STN2NE10 is a great choice for power supply and other power management applications. Its low on-resistance and wide temperature range make it ideal for a wide range of applications. In addition, its low gate threshold voltage and high current density make it useful for low voltage applications. The STN2NE10’s immunity to EMI ensures reliable performance in even the most challenging environments.
The specific data is subject to PDF, and the above content is for reference
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