Allicdata Part #: | 497-11363-5-ND |
Manufacturer Part#: |
STPS40SM80CT |
Price: | $ 2.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | DIODE ARRAY SCHOTTKY 80V TO220AB |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 80V 20A... |
DataSheet: | STPS40SM80CT Datasheet/PDF |
Quantity: | 45 |
1 +: | $ 1.89630 |
10 +: | $ 1.70037 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 80V |
Current - Average Rectified (Io) (per Diode): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 800mV @ 20A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 50µA @ 80V |
Operating Temperature - Junction: | 175°C (Max) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Base Part Number: | STPS40SM80C |
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Diodes - Rectifiers - Arrays includes a wide range of devices used in different applications to provide power conditioning and energy efficient systems. Among these devices is the STPS40SM80CT, a low-power dual Schottky rectifier diode array. This device is especially effective for applications where operational reliability and compact design are important.
The STPS40SM80CT is a two-diode array, consisting of four standard Schottky rectifier diodes. The two outer diodes are parallel connection, while the two inner diodes are connected in series. This configuration allows for low forward voltage drop and fast switching speed. The device has an operating temperature range of -65°C to +175°C, making it suitable for use in automotive and industrial applications.
The STPS40SM80CT is designed to perform efficiently in low-power applications and is typically used in consumer electronics and DC/DC converters to provide protection against voltage or current spikes. The device can be used in voltage protection circuits, reverse current protection, base bias and AC bypass applications, as well as in RF power amplifiers. Additionally, the STPS40SM80CT can be used as a fast switch in buck/boost converters and other switching applications where low on-state resistance is needed.
The STPS40SM80CT is a robust, reliable and cost-effective device, offering excellent reverse voltage ratings, high forward current ratings, fast switching speed and low forward voltage drop. It also has low reverse current leakage and reverse recovery voltage. The device has a maximum reverse leakage current of 5.0 μA at 150°C and a maximum reverse transfer capacitance of 0.6 pF. These features make the STPS40SM80CT an ideal solution for voltage and current regulation circuits.
In addition to its excellent performance, the STPS40SM80CT also has a fast switching response. It is able to switch from conduction to cut-off state in less than 1 μs, making it suitable for high-frequency switching applications. The device also has low on-state resistance, allowing it to operate in no-load conditions. This makes it well suited for load sharing applications and makes it ideal for switching applications.
The operating principle of the STPS40SM80CT is based on the PN junction diode. When a voltage is applied to the diode, the minority carriers in the P-type semiconductor become excited, generating holes in the N-type semiconductor. This creates an electric field across the PN junction, and as the holes flow through the N-type semiconductor, a current is created. This is known as forward bias and represents the forward voltage drop.
When the reverse voltage is applied, the electric field created across the PN junction will be cancelled out and the diode will no longer allow current to flow. This is known as the reverse bias and it is this reverse voltage that is used to regulate the current flow in the device. By increasing the reverse voltage, the current flow can be controlled, allowing the device to be used in voltage regulation and DC/DC converters.
The STPS40SM80CT is an effective, reliable and cost-effective device, providing excellent forward and reverse voltage ratings, fast switching speed and low forward voltage drop. It is suitable for a variety of low-power applications, including voltage and current protection, base bias and AC bypass circuits, as well as RF power amplifiers and switching applications. Its operating principle is based on the PN junction diode and it is able to switch from conduction to cut-off state in less than 1 μs.
The specific data is subject to PDF, and the above content is for reference
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