Allicdata Part #: | 497-15154-5-ND |
Manufacturer Part#: |
STPSC20H065CT |
Price: | $ 4.52 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | DIODE SCHOTTKY 650V 10A TO220AB |
More Detail: | Diode Array 1 Pair Common Cathode Silicon Carbide ... |
DataSheet: | STPSC20H065CT Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 4.11390 |
50 +: | $ 3.54476 |
100 +: | $ 3.07793 |
500 +: | $ 2.68020 |
1000 +: | $ 2.33437 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650V |
Current - Average Rectified (Io) (per Diode): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.75V @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 650V |
Operating Temperature - Junction: | -40°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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STPSC20H065CT Application Field and Working PrincipleSTPSC20H065CT is a Super-junction MOSFET assembly belonging to the category of diodes, rectifiers and arrays. A MOSFET is a Metal Oxide Semiconductor Field Effect Transistor, and is a type of switch used to control the flow of electricity. The STPSC20H065CT is a 20 Amp, 650 V rated version of a MOSFET and is primarily aimed for use in the power supply of applications such as television equipment, multi-level converters and lighting systems.
The STPSC20H065CT exhibits a typical RDS(on) of 0.75 mohms, making it an ideal choice for low resistance power dissipation applications such as automotive electronics, computing and server power supplies. The STPSC20H065CT is an STP Super-junction (SJ) MOSFET Assembly, which has improved performance over the standard MOSFET in terms of switching losses and EMI reduction. Additionally, the STPSC20H065CT provides improved stability, low noise and high temperature operation.
The working principle of the STPSC20H065CT is relatively simple, despite the complexity of its inner components. In its simplest form, a MOSFET acts as a voltage-controlled switch between two terminals, allowing electricity to flow through it when the gate (control) voltage is applied. The actual conduction of electrons across the MOSFET is determined by the junction resistance between the source and the drain. The STPSC20H065CT is able to provide superior performance over a standard MOSFET due to its Super-junction design, which utilizes multiple layers of semiconductors to provide improved switching times, EMI reduction and capacitance characteristics.
To maximize the performance of the STPSC20H065CT, it is important to ensure that its environment is kept at appropriate levels. This includes keeping the ambient temperature between -40 degrees Celsius and +175 degrees Celsius, ensuring that the voltage at the drain and source do not exceed the maximum rated voltage of the device and avoiding large current pulses. Long-term reliability of the components can be improved further by designing in adequate derating and providing efficient cooling to the assembly.
In conclusion, the STPSC20H065CT is an extremely versatile and performant MOSFET assembly, ideal for use in power supply applications requiring low resistance conduction, improved EMI and long-term reliability. By properly understanding the working principles and environmental conditions of the STPSC20H065CT, designers can take full advantage of its features and ensure proper operation at all times.
The specific data is subject to PDF, and the above content is for reference
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