STPSC4H065B-TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):	650V
Current - Average Rectified (Io):	4A
Voltage - Forward (Vf) (Max) @ If:	1.75V @ 4A
Speed:	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):	0ns
Current - Reverse Leakage @ Vr:	40µA @ 650V
Capacitance @ Vr, F:	200pF @ 0V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Operating Temperature - Junction:	-40°C ~ 175°C
Base Part Number:	STPSC4H065

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Introduction

A diode is a component of an electronic circuit which acts as a one-way valve for current flow. Diodes are encapsulated in a variety of packages and may be single, double, or even quadruple. The STPSC4H065B-TR is a high power single P-Channel Super Junction MOSFET from STMicroelectronics. It is a state-of-the-art component that is part of the industry-leading HEXFET® technology family from STMicroelectronics and is designed to provide superior switching performance.

Application Areas

The STPSC4H065B-TR component is primarily used in applications such as DC to DC converters, load switching, reverse battery protection, and automotive powertrain. It is also used in consumer electronics and industrial applications such as static switching and switching regulators. The component can be used in applications that require high speed switching, low voltage drop, and low RDS(on). It also features integrated avalanche protection and rated VGS @ -12.5V. Due to the features offered by this component, it is well suited for applications in the automotive market, such as Engine Control Unit (ECU) protection, and safetymodule management. This component can also be used to reduce energy consumption by reducing EMI, improving efficiency and offering improved power management capabilities. The component is also used in consumer electronics, such as televisions and mobile devices.

Features

The main features of the STPSC4H065B-TR component include:- Ultra low RDS(on) for high efficiency switching- Rated VGS @ -12.5V- Low gate charge for high performance- Integrated avalanche protection- Low noise and superior EMI reduction- Improves the overall efficiency of power supply designs- Operating temperature range from -20°C to 150°C- High power capability with 75W typical RDS(on)- Industry leading HEXFET® technology

Working Principle

The STPSC4H065B-TR component is a p-channel MOSFET which consists of a source, a drain and a gate. When a positive potential is applied to the gate, a MOSFET behaves like a resistor, allowing current to flow from the source to the drain. If a negative voltage is applied to the gate, the MOSFET behaves as an open circuit, blocking current from flowing. This feature makes the MOSFET ideal for switching applications, where it can be used to switch high-current circuits on or off. It also makes it useful for reverse battery protection applications, as it can be used to turn off the circuit when the battery is reversed.The STPSC4H065B-TR component also incorporates an avalanche protection feature. This feature helps protect the device from over-voltage and over-current conditions by turning off the device if the supply voltage or current exceeds a certain level.

Conclusion

The STPSC4H065B-TR is a high power single p-channel MOSFET from STMicroelectronics which is designed to provide superior switching performance. The component is well suited for applications in the automotive and consumer electronics markets, such as ECU protection, load switching, reverse battery protection, and safety module management. The component features low voltage drop and low RDS(on), improved efficiency, and integrated avalanche protection. Its features make it an ideal choice for applications that require high speed switching, low noise, and superior EMI reduction.

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