STX112-AP Allicdata Electronics
Allicdata Part #:

497-12706-3-ND

Manufacturer Part#:

STX112-AP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN DARL 100V 2A TO-92
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 2A ...
DataSheet: STX112-AP datasheetSTX112-AP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Power - Max: 1.2W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92AP
Base Part Number: STX112
Description

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The STX112-AP is a single bipolar junction transistor (BJT) used in a number of different applications. As with all BJTs, its working principle involves the use of a doped semiconductor as the base layer, with two other doped layers placed on either side of it to define the emitter and collector. When a voltage is applied to the base, electrons are attracted to the emitter and then pass through the collector. In doing so, it produces the current flow necessary for a range of applications.

The STX112-AP is often used as an amplifier and oscillator. Its ability to increase the strength of a signal while also controlling the frequency range makes it suitable for use in a number of different electronic devices. It is also usually used as a power switch, as it can be used to create on and off signals that operate at a higher frequency than other types of transistors. Additionally, it can be used as a temperature sensor, as it can detect changes in temperature and trigger a current, thereby activating a circuit.

The STX112-AP is designed with a breakdown voltage of 25V and a collector-base breakdown voltage of 40V, allowing it to withstand large voltage surges. It is also designed to be highly efficient, as it is able to transfer up to 90 percent of the power from the collector to the emitter. This makes it suitable for applications that require a high degree of power efficiency, such as motor control.

The STX112-AP is also designed to provide excellent frequency response and linearity. It is able to offer a wide range of frequencies from 0 to 100 GHz, making it suitable for applications requiring high-frequency operation. Additionally, the transistor is able to achieve a very linear response over its entire frequency range, making it suitable for use in high-fidelity audio applications.

In terms of its working principles, the STX112-AP acts as a current amplifier, a current switch, and a temperature sensor. In amplifier mode, the transistor receives an input signal and amplifies it to increase its strength. In switch mode, the transistor is used to create a signal that can turn an electronic device on and off continuously. Finally, in temperature sensor mode, the transistor is able to detect variations in temperature and cause a current to be triggered. This allows the transistor to activate a circuit when a certain temperature is reached.

Overall, the STX112-AP is a great single bipolar junction transistor for a number of different applications. Its versatility and high efficiency make it a great choice for applications where power efficiency is paramount. Additionally, its excellent frequency response and linearity make it suitable for use in high-fidelity audio applications. Finally, its ability to act as a current amplifier, a current switch, and a temperature sensor make it suitable for use in a variety of different circuits.

The specific data is subject to PDF, and the above content is for reference

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