Allicdata Part #: | SUF30G-E3/73-ND |
Manufacturer Part#: |
SUF30G-E3/73 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 3A P600 |
More Detail: | Diode Standard 400V 3A Through Hole P600 |
DataSheet: | SUF30G-E3/73 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.8V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 10µA @ 400V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | P600, Axial |
Supplier Device Package: | P600 |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | SUF30 |
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Diodes - Rectifiers - Single
Suf30g-e3/73 is a single-phase, ultrafast-recovery diode, primarily designed to provide extremely fast rectification in switching regulator, power factor correction and power converter applications. Suf30g-e3/73 enhances system efficiency and reliability by reducing switching loss while controlling EMI and conducted emissions.
Application Fields
Suf30g-e3/73 is mainly used in various power applications, including power conditioning, switched-mode power supplies, inverters and drivers, and thermal management systems. The main areas of application include uninterruptible power supply systems, home appliances, office and industrial automation, solar energy conversion and automotive applications.
The diode makes system design simpler in applications such as ac-dc rectification and dc-dc converters, where its ultrafast recovery time allows for high frequency operation with fewer external components. It meets the stringent requirements for power density demanded by many current and emerging applications, with minimal power loss, reduced EMI and improved thermal management.
Working Principle
When a diode is forward bias, electrons move from the cathode side to the anode side. This movement of electrons is called “forward conduction”. As the voltage across the diode is increased, the conduction through the diode increases. At a certain point, the diode reaches a maximum peak current and saturation voltage.
For most diodes, the voltage drop across the diode is referred to as the forward voltage drop. This is the voltage required by the diode to operate in the forward bias mode. This forward voltage drop is the “breakdown voltage”. As the voltage across the diode exceeds this breakdown voltage, the diode begins to conduct current, and the voltage across the diode is dropped to the saturation voltage.
In the case of Suf30g-e3/73, the breakthrough voltage for the forward-biased diode is 600V. At this breakdown voltage, electrons start to flow freely from the cathode to the anode. This forward conduction continues until the diode reaches its saturation voltage. When the saturation voltage is reached, the current through the diode is at its maximum value, and from then onwards the voltage across the diode remains constant.
When the diode is reverse-biased, no current can flow through it. Suf30g-e3/73 is designed to withstand high reverse voltage, up to 1000V, ensuring high reliability under reverse bias conditions.
In summary, Suf30g-e3/73 is an ideal choice for high-reliability applications due to its fast recovery time, high breakdown voltage, and high reverse voltage prejudice capability. Its integrated design and ultrafast recovery characteristics make it an attractive solution for high-efficient power systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SUF30G-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 3A P6... |
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