Allicdata Part #: | SUF30J-E3/73-ND |
Manufacturer Part#: |
SUF30J-E3/73 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 3A P600 |
More Detail: | Diode Standard 600V 3A Through Hole P600 |
DataSheet: | SUF30J-E3/73 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 2V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | P600, Axial |
Supplier Device Package: | P600 |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | SUF30 |
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Diodes are one of the most important and widely used semiconductor device. A rectifier diode is a two-terminal, unidirectional semiconductor device which conducts current in only one direction and blocks current in the other direction. It is a three-layer device consisting of P-type and N-type semiconductor materials, separated by a thin slice of metal or guard ring, which serves as electrodes. The rectifier diodes are further divided into single, dual and multiple rectifier diodes. All rectifier diodes are designed for different applications based on their parameters like voltage and current ratings, operating frequency, temperature, junction capacitance, etc.
The SUF30J-E3/73 is a single rectifier diode, which is specially designed for medium power applications. It is a three-layer semiconductor device, which is a combination of two P-type semiconductor materials, separated by a thin slice of N-type material. The two P-type layers provide the terminals of the device. The N-type guard ring can be considered as a contact between the two P-type layers in order to provide a precise electrical connection. It has a maximum reverse voltage of 30 V, a typical forward voltage of 0.725 V and a continuous forward current of 30 A.
The working principle of the SUF30J-E3/73 rectifier diode is based on the principles of p-n junction diode. When a reverse voltage of less than 30 V is applied to the device, the current flow is blocked or very low (cut-off). When a forward voltage of more than 0.725 V is applied to the device, the current passes through the device (saturation). It is important to note that the voltage and current ratings of the device should not be exceeded in order to ensure reliable functioning of the device in its application.
The SUF30J-E3/73 rectifier diode is mainly used in automotive, telecoms and industrial applications. It is used in automotive applications where high currents are required, such as in power supplies, voltage converters, regulators, motor and lighting systems. It is also used in telecommunication and automotive applications as rectifiers, drivers and high power switching devices. It is also used in industrial applications as rectifiers, drivers and high power switching devices. Wherever high forward current and low reverse voltage are required, the SUF30J-E3/73 diode find its application.
In conclusion, the SUF30J-E3/73 is a single rectifier diode, which is specially designed for medium power applications. It has a maximum reverse voltage of 30 V, a typical forward voltage of 0.725 V and a continuous forward current of 30 A. The device is mainly used in automotive, telecoms and industrial applications, where high forward current and low reverse voltage are required. In order to ensure reliable functioning of the device, it is important to operate it within its specified ratings.
The specific data is subject to PDF, and the above content is for reference
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