Allicdata Part #: | SURS8115T3G-VF01-ND |
Manufacturer Part#: |
SURS8115T3G-VF01 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 150V 1A SMB |
More Detail: | Diode Standard 150V 1A Surface Mount SMB |
DataSheet: | SURS8115T3G-VF01 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.07662 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 875mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 2µA @ 150V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMB |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | MURS115 |
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Surface mount (SMT) Schottky barrier rectifiers, such as the Surs8115T3G-VF01, are the superior technology when it comes to rectifiers. The Surs8115T3G-VF01 is designed to provide a higher current rectification in a smaller package and a minimal voltage drop. In its surface mount form, the Surs8115T3G-VF01 is as small as 0.26” in length and width and just 0.06” in height. It is single rectifier, with a maximum forward current of 8.0A a maximum reverse voltage of 15V , and a maximum surge current of 20A.
The Surs8115T3G-VF01 can be used in many different applications, such as in AC/DC converters, power supplies, and power inverters, as well as other applications. In AC/DC converters and power supplies, the Surs8115T3G-VF01 can be used to convert AC to DC by rectifying the alternating current. This allows the AC current to be converted into a unidirectional direct current, which can then be used to power electronic components. The Surs8115T3G-VF01 can also be used in power inverters in convert DC power to AC power by inverse rectification.
The working principle of the Surs8115T3G-VF01 is based on the Schottky barrier effect. A Schottky barrier is created when a strongly doped semiconductor is in contact with a metal. When the junction is forward biased, exciting electrons over the barrier, current flows, resulting in conduction. As the Surs8115T3G-VF01 is constructed using this principle, it is able to produce a high forward current while maintaining a minimal voltage drop.
Due to its small size, high current, and minimal voltage drop capabilities, the SMT Surs8115T3G-VF01 Schottky barrier rectifier is an excellent choice for many applications. In addition, its superior engineering provides superior performance in circuits that require a high level of efficiency, especially when a small footprint is critical. The Surs8115T3G-VF01 Schottky barrier rectifier is an ideal choice for low voltage, low current circuits.
The specific data is subject to PDF, and the above content is for reference
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