SURS8340T3G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	400V
Current - Average Rectified (Io):	3A
Voltage - Forward (Vf) (Max) @ If:	1.25V @ 3A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	75ns
Current - Reverse Leakage @ Vr:	10µA @ 400V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	DO-214AB, SMC
Supplier Device Package:	SMC
Operating Temperature - Junction:	-65°C ~ 175°C
Base Part Number:	MURS340

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Introduction

A SURS8340T3G is a type of single rectifier diode typically used in electronics and power applications. It features an ultra-high voltage blocking capability and has a PIV rating of up to 400V. It employs an avalanche-breakdown structure that provides a low forward voltage drop and a high off-state current-carrying capability. The diode also features a high switching speed, making it an ideal choice for fast switching applications.

Applications of SURS8340T3G

SURS8340T3G diode devices are mainly used for rectification, voltage clamping, and snubber applications in both industrial and consumer electronics.

• Rectification: SURS8340T3G devices have high blocking voltage and low forward voltage drop, making them suitable for use in rectification circuits. As a result, these devices are widely used in industrial power supplies, computer power supplies, and high-voltage applications.
• Voltage Clamping: SURS8340T3G devices can be used in voltage clamping applications where they are used to protect sensitive components from over-voltage conditions. These devices are widely used in circuit protection applications where fast switching speed is required.
• Snubbers: These devices can also be used in snubber circuits, where they are used to limit current peaks in power supply and motor drives to prevent motor damage or disruption to the power supply.

Working Principle of SURS8340T3G

The working principle of the SURS8340T3G is based on the avalanche breakdown effect. When the voltage across the diode is high enough (typically over 6V), it causes the electrons near the junction to acquire enough energy to jump the depletion region, creating a small avalanche. This allows for current to flow through the diode.When the voltage across the diode is too low (typically below 0.7V), the electrons near the junction cannot acquire enough energy to jump the depletion region, preventing current from flowing through the diode. This is known as the reverse-biased mode.The reverse voltage breakdown voltage of a SURS8340T3G is typically between 400V and 500V, depending on the manufacturer.

Conclusion

In summary, the SURS8340T3G is a type of single rectifier diode. It has an ultra-high voltage blocking capability, making it suitable for a wide range of applications such as rectification, voltage clamping, and snubber circuits. Its operation is based on the avalanche breakdown effect, allowing for current to flow through the diode when the voltage across it is high enough. Its reverse voltage breakdown voltage is typically between 400V and 500V.

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